SI1557DH-T1 Vishay/Siliconix, SI1557DH-T1 Datasheet

no-image

SI1557DH-T1

Manufacturer Part Number
SI1557DH-T1
Description
MOSFET N/P-Ch 12V 1.0/0.56A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1557DH-T1

Product Category
MOSFET
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+/- 12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
1.3 A, 0.86 A
Resistance Drain-source Rds (on)
0.235 Ohms at 4.5 V, 0.535 Ohms at - 4.5 V
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
10 nS, 10 nS
Forward Transconductance Gfs (max / Min)
0.8 S, 1.2 S
Gate Charge Qg
0.8 nC, 1.1 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
600 mW
Rise Time
25 nS, 30 nS
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
25 nS, 15 nS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1557DH-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71944
S10-1054-Rev. C, 03-May-10
PRODUCT SUMMARY
N-Channel
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
P-Channel
V
DS
- 12
12
(V)
J
a
N- and P-Channel 1.8 V (G-S) MOSFET
0.535 at V
0.880 at V
0.235 at V
0.280 at V
0.340 at V
1.26 at V
= 150 °C)
a
R
G
Ordering Information: Si1557DH-T1-E3 (Lead (Pb)-free)
D
DS(on)
S
1
1
2
GS
GS
GS
GS
GS
GS
a
= - 1.8 V
1
2
3
= - 4.5 V
= - 2.5 V
(Ω)
SC-70 (6-LEADS)
= 4.5 V
= 2.5 V
= 1.8 V
Steady State
Steady State
SOT-363
Top View
a
T
T
T
T
A
A
A
A
t ≤ 5 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
A
= 25 °C, unless otherwise noted
- 0.86
- 0.67
- 0.56
Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
I
D
1.3
1.2
1.0
(A)
6
5
4
Symbol
Symbol
T
D
G
S
R
R
J
2
V
V
1
2
I
P
, T
DM
I
I
thJA
thJF
DS
GS
D
S
D
stg
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Thermally Enhanced SC-70 Package
• Fast Switching to Minimize Gate and Switching
• Compliant to RoHS Directive 2002/95/EC
• Baseband dc-to-dc Converter Switch for Portable
Marking Code
EC XX
Definition
Losses
Electronics
5 s
1.3
0.9
0.5
0.6
0.3
Part # Code
N-Channel
Typical
170
220
105
Lot Traceability
and Date Code
12
Steady State
3
®
Power MOSFETs
0.39
0.47
0.25
1.2
0.8
- 55 to 150
± 8
- 0.86
- 0.62
- 0.5
5 s
0.6
0.3
P-Channel
Maximum
Vishay Siliconix
- 12
210
265
125
- 2
Steady State
- 0.77
- 0.55
- 0.39
Si1557DH
0.47
0.25
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

Related parts for SI1557DH-T1

SI1557DH-T1 Summary of contents

Page 1

... Baseband dc-to-dc Converter Switch for Portable Electronics SOT-363 SC-70 (6-LEADS Marking Code Part # Code Top View Si1557DH-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol °C 1 °C 0 ...

Page 2

... Si1557DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 71944 S10-1054-Rev. C, 03-May 0.6 0.8 1.0 Si1557DH Vishay Siliconix ° ° 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 100 80 C iss rss 0 ...

Page 4

... Si1557DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.2 0 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 = 100 µA 75 100 125 150 10 Limited DS(on Limited D 0 ...

Page 5

... Document Number: 71944 S10-1054-Rev. C, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1557DH Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 220 ° ...

Page 6

... Si1557DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 thru 3.5 V 2.5 2.0 1.5 1.0 0.5 0 Drain-to-Source Voltage (V) DS Output Characteristics 2 1 1.6 1.2 0.8 0.4 0.0 0.0 0.5 1.0 1 Drain Current (A) D On-Resistance vs. Drain Current 0 0.0 0.3 0 Total Gate Charge (nC) g Gate Charge www ...

Page 7

... A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage (V) DS > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si1557DH Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...

Page 8

... Si1557DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 9

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 10

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended ...

Page 11

AN816 Vishay Siliconix Front of Board SC70 SC70−6 DUAL THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the ...

Page 12

Alloy 42 200 100 Time (Secs) FIGURE 4. Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 500 400 300 200 Copper 100 0 ...

Page 13

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 14

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

Related keywords