SI1563DH-T1 Vishay/Siliconix, SI1563DH-T1 Datasheet
SI1563DH-T1
Specifications of SI1563DH-T1
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SI1563DH-T1 Summary of contents
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... Top View Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free) Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...
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... Si1563DH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...
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... 1. 0.0 0.3 0 Total Gate Charge (nC) g Gate Charge Document Number: 71963 S10-1054-Rev. B, 03-May- 1.5 2.0 0.9 1.2 1.5 Si1563DH Vishay Siliconix 2 ° °C 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 160 120 C iss oss C rss ...
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... Si1563DH Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 100 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 10 Limited ...
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... Document Number: 71963 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1563DH Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 170 ° ...
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... Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3 thru 3.5 V 2.5 2.0 1.5 1.0 0.5 0 Drain-to-Source Voltage (V) DS Output Characteristics 0.8 0.4 0.0 0.0 0.5 1.0 1 Drain Current (A) D On-Resistance vs. Drain Current 0 0.0 0.3 0 Total Gate Charge (nC) ...
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... DS(on D(on) Limited 0 °C A Single Pulse BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si1563DH Vishay Siliconix 1 0. 1.2 0.8 0.4 0 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 ...
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... Si1563DH Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...
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- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...
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... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended ...
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AN816 Vishay Siliconix Front of Board SC70 SC70−6 DUAL THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the ...
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Alloy 42 200 100 Time (Secs) FIGURE 4. Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 500 400 300 200 Copper 100 0 ...
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Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...