VP0550N3-P002 Supertex, VP0550N3-P002 Datasheet

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VP0550N3-P002

Manufacturer Part Number
VP0550N3-P002
Description
MOSFET 500V 125Ohm
Manufacturer
Supertex
Datasheet

Specifications of VP0550N3-P002

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 54 mA
Resistance Drain-source Rds (on)
125 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
10 ns
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Features
Applications
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Supertex inc.
Product Summary
Ordering Information
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
VP0550N3-G
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
VP0550
Device
memories, displays, bipolar transistors, etc.)
Device
ISS
Supertex inc.
and fast switching speeds
BV
VP0550N3-G
DSS
-500
Package
(V)
/BV
TO-92
DGS
P-Channel Enhancement-Mode
Vertical DMOS FETs
R
1235 Bordeaux Drive, Sunnyvale, CA 94089
(max)
125
DS(ON)
(Ω)
-55°C to +150°C
(Die in wafer form)
VP1550NW
I
(min)
-100
(mA)
D(ON)
NW
Value
BV
BV
±20V
DGS
DSS
General Description
The Supertex VP0550 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Product Marking
Package may or may not include the following marks: Si or
Pin Configuration
Wafer / Die Options
(Die on adhesive tape)
Y Y W W
0 5 5 0
SiVP
Tel: 408-222-8888
VP1550NJ
NJ
YY = Year Sealed
WW = Week Sealed
SOURCE
TO-92 (N3)
TO-92 (N3)
= “Green” Packaging
www.supertex.com
DRAIN
GATE
(Die in waffle pack)
VP1550ND
ND
VP0550

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VP0550N3-P002 Summary of contents

Page 1

... Refer to Die Specification VF15 for layout and dimensions. Product Summary BV /BV Device DSS DGS (V) VP0550N3-G -500 Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V t (ON) t d(ON) 0V OUTPUT 10% VDD Supertex inc. I Power Dissipation D † (pulsed (mA) (W) -250 1 25°C unless otherwise specified) A Min ...

Page 3

... V (volts) DS Transconductance vs. Drain Current 100 V = -25V -0.05 -0.10 -0.15 I (amperes) D Maximum Rated Safe Operating Area -1.0 -0.1 TO-92(DC) -0. -0.001 -1 -10 V (volts) DS Supertex inc. -100 - -10V GS -60 -8V -7V -40 -6V -20 -5V -40 - 1.0 150 C O -0.20 -0.25 1.0 0.8 0.6 0.4 0.2 -100 -1000 1235 Bordeaux Drive, Sunnyvale, CA 94089 ...

Page 4

... Transfer Characteristics -0 -25V DS -0 -2.0 -4.0 -6.0 V (volts) GS Capacitance vs. Drain-to-Source Voltage -10 -20 V (volts) DS Supertex inc. (cont.) 200 160 120 80 40 100 150 1.10 1.05 1.00 0.95 0.90 0.85 -8.0 -10 - 1MHz - ISS -4 -2 -30 -40 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Drain Current V = -5V ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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