VP0550N3 Supertex, VP0550N3 Datasheet - Page 4

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VP0550N3

Manufacturer Part Number
VP0550N3
Description
MOSFET 500V 125Ohm
Manufacturer
Supertex
Datasheet

Specifications of VP0550N3

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.05 A
Resistance Drain-source Rds (on)
80 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Fall Time
15 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1000 mW
Rise Time
15 ns
Factory Pack Quantity
1000
Typical Turn-off Delay Time
10 ns
Typical Performance Curves
1.15
1.10
1.05
1.00
0.95
0.90
-0.4
-0.2
80
60
40
20
0
Capacitance vs. Drain-to-Source Voltage
0
-50
Supertex inc.
0
0
V
BV
DS
= -25V
DSS
-2.0
Variation with Temperature
Transfer Characteristics
-10
0
-4.0
V
V
GS
T
DS
j
(
(volts)
50
-20
(volts)
O
C)
-6.0
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
-8.0
f = 1MHz
(cont.)
C
ISS
150
-10
-40
4
1.10
1.05
1.00
0.95
0.90
0.85
200
160
120
-10
80
40
-8
-6
-4
-2
0
0
-50
0
0
V
Gate Drive Dynamic Characteristics
(th)
On-Resistance vs. Drain Current
Tel: 408-222-8888
and R
30pF
-0.05
0.2
V
GS
DS
0
= -5V
Q
Variation with Temperature
G
R
-0.10
I
(nanocoulombs)
0.4
D
DS(ON)
(amperes)
T
j
50
(
@ -10V, -10mA
O
C)
83pF
-0.15
0.6
V
www.supertex.com
V
GS
DS
= -10V
V
= -10V
V
(th)
DS
100
@ -1.0mA
= -40V
-0.20
0.8
-0.25
150
1.0
VP0550
2.0
1.6
1.2
0.8
0.4
0

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