TN0104N3-P002 Supertex, TN0104N3-P002 Datasheet

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TN0104N3-P002

Manufacturer Part Number
TN0104N3-P002
Description
MOSFET 40V 1.8Ohm
Manufacturer
Supertex
Datasheet

Specifications of TN0104N3-P002

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Resistance Drain-source Rds (on)
1.8 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
6 ns
Features
Applications
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Supertex inc.
Ordering Information
Product Summary
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
TN0104N3-G
TN0104N8-G
TN0104
Device
Low threshold (1.6V max.)
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Device
Supertex inc.
TN0104N3-G
BV
TO-92
DSS
(V)
40
40
/BV
Package Options
DGS
R
TO-243AA (SOT-89)
(max)
1.8
2.0
DS(ON)
(Ω)
N-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
TN0104N8-G
-55
I
(min)
D(ON)
2.0
2.0
(A)
O
C to +150
V
(max)
Value
BV
BV
1.6
1.6
±20V
GS(th)
(V)
DGS
DSS
O
C
General Description
This low threshold, enhancement-mode (normally-off) transistor
utilizes a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and thermally-
induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
(Die in wafer form)
Pin Configurations
Product Marking
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
TN1504NW
NW
SOURCE
TO-92 (N3)
TN1LW
Y Y W W
0 1 0 4
Si TN
Tel: 408-222-8888
DRAIN
TO-243AA (SOT-89) (N8)
Wafer / Die Options
(Die on adhesive tape)
GATE
W = Code for Week Sealed
TN1504NJ
YY = Year Sealed
WW = Week Sealed
TO-92 (N3)
NJ
= “Green” Packaging
www.supertex.com
= “Green” Packaging
TO-243AA (SOT-89) (N8)
DRAIN
(Die in waffle pack)
GATE
TN1504ND
TN0104
DRAIN
ND
SOURCE

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TN0104N3-P002 Summary of contents

Page 1

... Refer to Die Specification VF15 for layout and dimensions. Product Summary R BV /BV Device DSS DGS (max) (V) TN0104N3-G 40 TN0104N8-G 40 Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature Absolute Maximum Ratings are those values beyond which damage to the device may occur ...

Page 2

... Rise time r t Turn-off delay time d(OFF) t Fall time f Diode forward voltage V drop SD t Reverse recovery time rr Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Supertex inc Power Dissipation D D † (pulsed) C (W) (mA) (A) 450 2.40 1.0 630 2.90 1 increase possible on ceramic substrate ...

Page 3

... Switching Waveforms and Test Circuit 10V INPUT 10 (ON d(ON) r VDD 10% OUTPUT 0V 90% Supertex inc. 90% t (OFF d(OFF) f 10% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 TN0104 Pulse L Generator R GEN INPUT Tel: 408-222-8888 www.supertex.com OUTPUT D.U.T. ...

Page 4

... V (volts) DS Transconductance vs. Drain Current 0. 25V DS 0.60 0.45 0.30 0. 0.5 1.0 1.5 I (amperes) D Maximum Rated Safe Operating Area 10 TO-92 (DC) 0.0 TO-243AA (DC) 0 0.01 0.1 1.0 V (volts) DS Supertex inc. 3.75 3. 10V GS 2. 1. 125 2.0 2.5 1.0 0.8 0.6 0.4 0.2 10 100 1235 Bordeaux Drive, Sunnyvale, CA 94089 ...

Page 5

... Transfer Characteristics 3 25V DS 2.4 1.8 1.2 0 (volts) GS Capacitance vs. Drain-to-Source Voltage 100 (volts) DS Supertex inc. (cont.) 10 100 150 1.4 1.2 1.0 0.8 0.6 0 1MHz C ISS C RSS 30 40 1235 Bordeaux Drive, Sunnyvale, CA 94089 5 On-Resistance vs. Drain Current 10V GS 4 ...

Page 6

... A MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Supertex inc Front View ...

Page 7

... JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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