BS250 SB36890\E6 Vishay Semiconductors, BS250 SB36890\E6 Datasheet

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BS250 SB36890\E6

Manufacturer Part Number
BS250 SB36890\E6
Description
MOSFET P-Channel 60V 0.25A
Manufacturer
Vishay Semiconductors
Datasheet
1.TP0610L-TR1.pdf (5 pages)

Specifications of BS250 SB36890\E6

Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 45 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 0.18 A
Resistance Drain-source Rds (on)
14 Ohms
Mounting Style
Through Hole
Package / Case
TO-92
Power Dissipation
0.83 W
Factory Pack Quantity
20000
Notes
a.
For applications information see AN804.
Document Number: 70209
S-41260—Rev. H, 05-Jul-04
PRODUCT SUMMARY
FEATURES
D High-Side Switching
D Low On-Resistance: 8 W
D Low Threshold: −1.9 V
D Fast Switching Speed: 16 ns
D Low Input Capacitance: 15 pF
G
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
(T
Pulsed Drain Current
Power Dissipation
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
S
D
J
Pulse width limited by maximum junction temperature.
= 150_C)
Part Number
TO-226AA
Top View
(TO-92)
TP0610L
VP0610L
VP0610T
TP0610L
TP0610T
VP0610L
BS250
1
2
3
a
Parameter
“S” = Siliconix Logo
xxll = Date Code
Device Marking
Device Marking
Front View
Front View
VP0610L
TP0610L
0610L
“S” VP
0610L
“S” TP
xxll
xxll
V
(BR)DSS
T
T
T
T
P-Channel 60-V (D-S) MOSFET
A
A
A
A
= 25_C
= 100_C
= 25_C
= 100_C
−60
−60
−60
−60
−45
Min (V)
G
D
S
(TO-18 Lead Form)
TO-92-18RM
Top View
A
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Switching
D Easily Driven Without Buffer
BS250
1
2
3
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
R
V
V
J
I
P
P
, T
DM
I
I
thJA
DS
GS
D
D
D
D
stg
r
TP0610L
10 @ V
10 @ V
10 @ V
10 @ V
14 @ V
DS(on)
“S” = Siliconix Logo
xxll = Date Code
Device Marking
−0.18
−0.11
"30
−0.8
0.32
−60
156
0.8
Front View
BS250
“S” BS
GS
GS
GS
GS
GS
250
xxll
Max (W)
= −10 V
= −10 V
= −10 V
= −10 V
= −10 V
TP0610L/T, VP0610L/T, BS250
TP0610T
−0.12
−0.07
"30
−0.4
0.36
0.14
−60
350
VP0610L
−55 to 150
G
S
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps,
D Battery Operated Systems
D Power Supply, Converter Circuits
D Motor Control
−0.18
−0.11
"30
−0.8
0.32
−60
156
0.8
Hammers, Displays, Memories,
Transistors, etc.
1
2
V
−1 to −2.4
−1 to −2.4
−1 to −3.5
−1 to −3.5
−1 to −3.5
GS(th)
TP0610T
Top View
VP0610T
(SOT-23)
TO-236
VP0610T
(V)
−0.12
−0.07
"30
−0.4
0.36
0.14
Vishay Siliconix
−60
350
3
D
BS250
Marking Code:
TP0610T: TOwll
VP0610T: VOwll
w = Week Code
lL = Lot Traceability
−0.18
"25
0.83
−45
150
www.vishay.com
I
D
−0.18
−0.12
−0.18
−0.12
−0.18
(A)
Unit
_C/W
_C
W
W
V
V
A
1

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BS250 SB36890\E6 Summary of contents

Page 1

P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V (BR)DSS TP0610L TP0610T VP0610L VP0610T BS250 FEATURES D High-Side Switching D Low On-Resistance Low Threshold: −1 Fast Switching Speed Low Input Capacitance: 15 ...

Page 2

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Symbol Static Drain Source Drain-Source V V (BR)DSS (BR)DSS Breakdown Voltage Gate-Threshold V GS(th) Voltage V Gate-Body Leakage GSS GSS Zero Gate Voltage ...

Page 3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1 0 0.6 0.4 0.2 0 − Drain-to-Source Voltage (V) DS On-Resistance vs. Drain Current 4 ...

Page 4

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 100 T = 125_C 0.00 0.3 0.6 0.9 V − Source-to-Drain Voltage (V) SD ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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