IS63LV1024L-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS63LV1024L-10TLI-TR Datasheet

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IS63LV1024L-10TLI-TR

Manufacturer Part Number
IS63LV1024L-10TLI-TR
Description
IC SRAM 1MBIT 10NS 32TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS63LV1024L-10TLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS63LV1024
IS63LV1024L
Copyright © 2010 Integrated Silicon Solution, Inc.
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. O
07/02/2010
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
• Easy memory expansion with
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
• Lead-free Available
FUNCTIONAL BLOCK DIAGRAM
greater noise immunity
options
CE
required
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin STSOP (Type I)
– 36-pin BGA (8mmx10mm)
8, 10, 12 ns
power-down
I/O0-I/O7
A0-A16
VDD
GND
CE
All rights reserved.
and
WE
OE
CE
OE
DECODER
CIRCUIT
CONTROL
CIRCUIT
DATA
I/O
ISSI reserves the right to make changes to this specification and its products at any time
1-800-379-4774
DESCRIPTION
The
low power, 131,072-word by 8-bit CMOS static RAM in
revolutionary pinout. The IS63LV1024/IS63LV1024L is fab-
ricated using
This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low
power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 µW (typical) with CMOS input levels.
The IS63LV1024/IS63LV1024L operates from a single 3.3V
power supply and all inputs are TTL-compatible.
ISSI
MEMORY ARRAY
COLUMN I/O
IS63LV1024/IS63LV1024L is a very high-speed,
128K X 8
ISSI
's high-performance CMOS technology.
JULY 2010
1

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IS63LV1024L-10TLI-TR Summary of contents

Page 1

... When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The IS63LV1024/IS63LV1024L operates from a single 3.3V power supply and all inputs are TTL-compatible. DECODER MEMORY ARRAY ...

Page 2

... IS63LV1024 IS63LV1024L PIN CONFIGURATION 32-Pin SOJ I/ I/ VDD 8 25 GND PIN DESCRIPTIONS A0-A16 Address Inputs CE Chip Enable Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Data Inputs/Outputs V Power DD GND Ground 2 PIN CONFIGURATION 32-Pin TSOP (Type II) (T) 32-Pin STSOP (Type I) (H) ...

Page 3

... IS63LV1024 IS63LV1024L TRUTH TABLE Mode Not Selected X H (Power-down) Output Disabled H L Read H L Write L L ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Terminal Voltage with Respect to GND TERM T Storage Temperature STG P Power Dissipation T Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 4

... V (CMOS Inputs) V – 0.2V ≤ 0.2V Notes address and data inputs are cycling at the maximum frequency means no input lines change. MAX 2. Typical values are measured 3.3V IS63LV1024L POWER SUPPLY CHARACTERISTICS Symbol Parameter Test Conditions = Max Operating Supply Current mA Max. OUT ...

Page 5

... IS63LV1024 IS63LV1024L READ CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Read Cycle Time RC t Address Access Time AA t Output Hold Time OHA CE Access Time t ACE OE Access Time t DOE OE to Low-Z Output t (2) LZOE OE to High-Z Output t (2) HZOE CE to Low-Z Output t (2) LZCE ...

Page 6

... IS63LV1024 IS63LV1024L AC WAVEFORMS (1,2) READ CYCLE NO. 1 ADDRESS D OUT PREVIOUS DATA VALID READ CYCLE NO. 2 (1,3) ADDRESS LZCE HIGH-Z D OUT Notes HIGH for a Read Cycle. 2. The device is continuously selected. OE Address is valid prior to or coincident with CE LOW transitions OHA DOE t LZOE t ACE DATA VALID ...

Page 7

... IS63LV1024 IS63LV1024L WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter t Write Cycle Time Write End t SCE t Address Setup Time to AW Write End t Address Hold from HA Write End t Address Setup Time SA WE Pulse Width (OE High) t (1) PWE 1 WE Pulse Width (OE Low) t (2) PWE 2 t Data Setup to Write End ...

Page 8

... IS63LV1024 IS63LV1024L AC WAVEFORMS (1) WRITE CYCLE NO. 2 (WE Controlled, ADDRESS OE CE LOW DATA UNDEFINED OUT D IN (WE Controlled LOW During Write Cycle) ADDRESS OE LOW CE LOW DATA UNDEFINED OUT D IN Notes: 1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write ...

Page 9

... Integrated Silicon Solution, Inc. — www.issi.com — Rev. O 07/02/2010 Test Condition Options See Data Retention Waveform = 2.0V, CE ≥ – 0.2V IS63LV1024 DD DD IS63LV1024L See Data Retention Waveform See Data Retention Waveform = 3.0V and not 100% tested (CE Controlled) Data Retention Mode SDR CE ≥ ...

Page 10

... IS63LV1024 IS63LV1024L Speed (ns) Order Part No. 8 IS63LV1024-8K IS63LV1024-8KL 10 IS63LV1024-10T IS63LV1024-10J IS63LV1024-10K 12 IS63LV1024-12T IS63LV1024-12J IS63LV1024-12JL IS63LV1024-12KL Speed (ns) Order Part No. 8 IS63LV1024-8KI 10 IS63LV1024-10KI 12 IS63LV1024-12TI 10 Package 400-mil Plastic SOJ 400-mil Plastic SOJ, Lead-free TSOP (Type II) 300-mil Plastic SOJ 400-mil Plastic SOJ TSOP (Type II) ...

Page 11

... IS63LV1024L-10HL 12 IS63LV1024L-12T IS63LV1024L-12TL IS63LV1024L-12H IS63LV1024L-12J IS63LV1024L-12JL IS63LV1024L-12B Speed (ns) Order Part No. 8 IS63LV1024L-8TI IS63LV1024L-8JI IS63LV1024L-8KI IS63LV1024L-8BI 10 IS63LV1024L-10HI IS63LV1024L-10JLI IS63LV1024L-10KLI IS63LV1024L-10TLI 12 IS63LV1024L-12BI IS63LV1024L-12BLI IS63LV1024L-12TI IS63LV1024L-12TLI Speed (ns) Top Mark 8 IS63LV1024L-10KLI IS63LV1024L-10TLI Integrated Silicon Solution, Inc. — www.issi.com — Rev. O 07/02/2010 Package TSOP (Type II) ...

Page 12

... IS63LV1024 IS63LV1024L 12 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. O 07/02/2010 ...

Page 13

... IS63LV1024 IS63LV1024L Integrated Silicon Solution, Inc. — www.issi.com — Rev. O 07/02/2010 1-800-379-4774 13 ...

Page 14

... IS63LV1024 IS63LV1024L 14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. O 07/02/2010 ...

Page 15

... IS63LV1024 IS63LV1024L Integrated Silicon Solution, Inc. — www.issi.com — Rev. O 07/02/2010 1-800-379-4774 15 ...

Page 16

... IS63LV1024 IS63LV1024L 16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. O 07/02/2010 ...

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