MT48LC8M8A2P-75:G Micron Technology Inc, MT48LC8M8A2P-75:G Datasheet - Page 28

IC SDRAM 64MBIT 133MHZ 54TSOP

MT48LC8M8A2P-75:G

Manufacturer Part Number
MT48LC8M8A2P-75:G
Description
IC SDRAM 64MBIT 133MHZ 54TSOP
Manufacturer
Micron Technology Inc
Type
SDRAMr
Datasheet

Specifications of MT48LC8M8A2P-75:G

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
64M (8M x 8)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
8Mx8
Density
64Mb
Address Bus
14b
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
140mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Figure 16:
PDF: 09005aef80725c0b/Source: 09005aef806fc13c
64MSDRAM_2.fm - Rev. N 12/08 EN
READ-to-PRECHARGE
Note:
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE
command to the same bank (provided that auto precharge was not activated), and a full-
page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last
desired data element is valid, where x = CL -1. This is shown in Figure 16 for each
possible CL; data element n + 3 is either the last of a burst of four or the last desired of a
longer burst. Following the PRECHARGE command, a subsequent command to the
same bank cannot be issued until
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
Full-page READ bursts can be truncated with the BURST TERMINATE command, and
fixed-length READ bursts may be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL = -1. This is shown in Figure 17 on page 29 for each possible CL; data
element n + 3 is the last desired data element of a longer burst.
COMMAND
COMMAND
ADDRESS
ADDRESS
DQM is LOW.
CLK
CLK
DQ
DQ
BANK,
T0
COL n
T0
BANK,
COL n
READ
READ
CL = 2
T1
T1
NOP
NOP
CL = 3
T2
T2
NOP
NOP
28
D
OUT
n
t
RP is met. Note that part of the row precharge time is
T3
T3
NOP
NOP
n + 1
D
D
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
OUT
n
TRANSITIONING DATA
PRECHARGE
PRECHARGE
T4
T4
X = 1 cycle
n + 2
D
n + 1
D
OUT
OUT
X = 2 cycles
T5
T5
NOP
NOP
n + 3
D
n + 2
D
OUT
64Mb: x4, x8, x16 SDRAM
OUT
T6
T6
NOP
NOP
n + 3
D
©2000 Micron Technology, Inc. All rights reserved.
OUT
DON’T CARE
T7
NOP
Commands

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