MT48LC2M32B2P-5:G Micron Technology Inc, MT48LC2M32B2P-5:G Datasheet - Page 59

• Manufacturer Part Number: MT48LC2M32B2P-5:G
• Description: IC SDRAM 64MBIT 200MHZ 86TSOP
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC2M32B2P-5:G

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOP
• Organization: 2Mx32
• Density: 64Mb
• Address Bus: 13b
• Access Time (max): 4.5ns
• Maximum Clock Rate: 200MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 280mA
• Pin Count: 86
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Package: 86TSOP-II
• Address Bus Width: 13 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 4.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 41:
PDF: 09005aef811ce1fe/Source: 09005aef811ce1d5
64MSDRAMx32_2.fm - Rev. J 12/08 EN
COMMAND
BA0, BA1
DQM 0-3
A0-A9
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
Alternating Bank Read Accesses
ACTIVE
BANK 0
T0
ROW
ROW
t CKH
t CMH
t AH
t AH
t AH
Notes:
t RCD - BANK 0
t RAS - BANK 0
t
t
RC - BANK 0
RRD
t CK
T1
NOP
1. For this example, BL = 4 and CL = 2.
2. A8 and A9 = “Don’t Care.”
ENABLE AUTO PRECHARGE
t CMS
t CL
COLUMN m 2
BANK 0
T2
READ
t CMH
t CH
CAS Latency - BANK 0
T3
NOP
t LZ
t AC
59
BANK 4
ACTIVE
T4
ROW
ROW
D
OUT
t OH
t AC
m
t RCD - BANK 4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
T5
OUT
NOP
m + 1
t OH
t AC
ENABLE AUTO PRECHARGE
COLUMN b 2
BANK 4
D
T6
READ
OUT
m + 2
t OH
t AC
CAS Latency - BANK 4
t RP - BANK 0
©2001 Micron Technology, Inc. All rights reserved.
D
T7
OUT
NOP
64Mb: x32 SDRAM
m + 3
t OH
Timing Diagrams
t AC
BANK 0
T8
ROW
ACTIVE
ROW
DON’T CARE
UNDEFINED
D
OUT
t RCD - BANK 0
t OH
t AC
b