SBC807-16LT3G ON Semiconductor, SBC807-16LT3G Datasheet

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SBC807-16LT3G

Manufacturer Part Number
SBC807-16LT3G
Description
Transistors Bipolar - BJT SS GP XSTR SPCL TR
Manufacturer
ON Semiconductor
Datasheet

Specifications of SBC807-16LT3G

Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
100 at 100 mA at 1 V, 40 at 500 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23
Dc Current Gain Hfe Max
100 at 100 mA at 1 V
Maximum Power Dissipation
300 mW
Minimum Operating Temperature
- 55 C
BC807-16L, SBC807­16L
BC807-25L, SBC807­25L,
BC807-40L, SBC807-40L
General Purpose
Transistors
PNP Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 10
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
Thermal Resistance,
Total Device Dissipation Alumina
Thermal Resistance,
Junction and Storage Temperature
Site and Control Change Requirements
Compliant
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Junction−to−Ambient
Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
−500
−5.0
Max
−45
−50
225
556
300
417
1.8
2.4
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
5xx = Device Code
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Date Code*
= Pb−Free Package
1
xx = A1, B1, or C
CASE 318
STYLE 6
SOT−23
5xx M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC807−16LT1/D

Related parts for SBC807-16LT3G

SBC807-16LT3G Summary of contents

Page 1

... BC807-16L, SBC807­16L BC807-25L, SBC807­25L, BC807-40L, SBC807-40L General Purpose Transistors PNP Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted.) A Symbol V (BR)CEO V (BR)CES V (BR)EBO I BC807−16, SBC80−16L BC807−25, SBC807−25L BC807−40, SBC807−40L V CE(sat) V BE(on) C Specific Marking Package SOT−23 5A1 (Pb−Free) SOT−23 5A1 (Pb− ...

Page 3

TYPICAL CHARACTERISTICS − BC807−16LT1 500 400 150°C 300 25°C 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 ...

Page 4

TYPICAL CHARACTERISTICS − BC807−16LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT (mA) C Figure ...

Page 5

TYPICAL CHARACTERISTICS − BC807−25LT1 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 8. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 ...

Page 6

TYPICAL CHARACTERISTICS − BC807−25LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT (mA) C Figure ...

Page 7

TYPICAL CHARACTERISTICS − BC807−40LT1 1000 900 800 150°C 700 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 16. DC Current Gain vs. Collector Current 1.1 1 ...

Page 8

TYPICAL CHARACTERISTICS − BC807−40LT1 -1.0 -0.8 -0.6 -0 -0.01 +1.0 q for V VC CE(sat) 0 -1.0 q for -2.0 -1.0 -10 -100 I , COLLECTOR CURRENT (mA) C Figure ...

Page 9

TYPICAL CHARACTERISTICS − BC807−16LT1, BC807−25LT1, BC807−40LT1 1 0.1 0.01 0.001 0 COLLECTOR EMITTER VOLTAGE (V) CE Figure 24. Safe Operating Area http://onsemi.com 100 Thermal Limit 10 100 9 ...

Page 10

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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