DSA5G01B0L Panasonic Electronic Components, DSA5G01B0L Datasheet
DSA5G01B0L
Manufacturer Part Number
DSA5G01B0L
Description
Transistors Bipolar - BJT Bipolar Power Transistor
Manufacturer
Panasonic Electronic Components
Datasheet
1.DSA5G01B0L.pdf
(4 pages)
Specifications of DSA5G01B0L
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
- 20 V
Emitter- Base Voltage Vebo
- 5 V
Dc Collector/base Gain Hfe Min
70
Package / Case
SMini3-F2-B
Continuous Collector Current
- 30 mA
Maximum Power Dissipation
150 mW
DSA5G01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSA2G01 in SMini3 type package
Features
Packaging
Absolute Maximum Ratings T
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2011
High forward current transfer ratio h
High transition frequency f
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
(Common emitter)
Noise figure
Reverse transfer impedance
2. * : Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking Symbol
Parameter
Parameter
Code
Rank
h
FE
T
*
a
= 25°C±3°C
70 to 140
FE
A4B
a
with excellent linearity
B
B
= 25°C
Symbol
Symbol
V
V
V
V
I
I
I
V
T
h
CE(sat)
C
NF
Z
CBO
CEO
EBO
P
I
T
CBO
CEO
EBO
f
FE
C
stg
BE
T
C
rb
re
j
110 to 220
A4C
C
C
V
V
V
V
V
I
V
V
V
V
–55 to +150
C
CE
CB
CE
EB
CE
CE
CE
CE
CE
= –10 mA, I
Rating
= –10 V, I
= –20 V, I
= –5 V, I
= –10 V, I
= –10 V, I
= –10 V, I
= –10 V, I
= –10 V, I
–30
–20
–30
150
150
= –10 V, I
–5
Ver. BED
70 to 220
C
No-rank
Conditions
C
E
B
C
C
C
C
C
B
= 0
A4
= –1 mA
= 0
= 0
= –1 mA
= –1 mA
= –1 mA, f = 10.7 MHz
= –1 mA, f = 5 MHz
= –1 mA, f = 2 MHz
= –1 mA
0
Unit
mW
mA
°C
°C
V
V
V
Package
Marking Symbol: A4
Code
Pin Name
SMini3-F2-B
1. Base
2. Emitter
3. Collector
Min
150
70
– 0.7
– 0.1
Typ
300
1.0
2.8
22
Max
– 0.1
–100
–10
220
MHz
Unit
µA
µA
µA
dB
pF
W
V
V
1
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DSA5G01B0L Summary of contents
Page 1
... Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Reverse transfer capacitance (Common emitter) Noise figure Reverse transfer impedance Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Rank classification Code Rank 140 FE Marking Symbol A4B Product of no-rank is not classifi ...
Page 2
DSA5G01 DSA5G01_PC-Ta P 250 200 150 100 120 160 ( °C ) Ambient temperature T a DSA5G01_VCEsat-IC V I CE(sat) C − − ...
Page 3
SMini3-F2-B 2.00 ±0.20 +0.05 0.30 − 0. (0.65) (0.65) 1.30 ±0.10 (5°) Ver. BED DSA5G01 Unit: mm +0.05 0.13 − 0.02 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...