DSA9G01C0L Panasonic Electronic Components, DSA9G01C0L Datasheet
DSA9G01C0L
Manufacturer Part Number
DSA9G01C0L
Description
Transistors Bipolar - BJT Bipolar Power Transistor
Manufacturer
Panasonic Electronic Components
Datasheet
1.DSA9G01C0L.pdf
(4 pages)
Specifications of DSA9G01C0L
Rohs
yes
Transistor Polarity
NPN
Collector- Emitter Voltage Vceo Max
- 20 V
Emitter- Base Voltage Vebo
- 5 V
Dc Collector/base Gain Hfe Min
70
Package / Case
SSMini3-F3-B
Continuous Collector Current
- 30 mA
Maximum Power Dissipation
125 mW
DSA9G01
Silicon NPN epitaxial planar type
For high-frequency amplification
DSA5G01 in SSMini3 type package
Features
Packaging
Absolute Maximum Ratings T
Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2011
High transition frequency f
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Reverse transfer capacitance
(Common emitter)
Noise figure
Reverse transfer impedance
2. * : Rank classification
Product of no-rank is not classified and have no marking symbol for rank.
Marking Symbol
Parameter
Parameter
Code
Rank
h
FE
T
*
a
= 25°C±3°C
70 to 140
A4B
a
B
B
= 25°C
Symbol
Symbol
V
V
V
V
I
I
I
V
T
h
CE(sat)
C
NF
Z
CBO
CEO
EBO
P
I
T
CBO
CEO
EBO
f
FE
C
stg
BE
T
C
rb
re
j
110 to 220
A4C
C
C
V
V
V
V
V
I
V
V
V
V
–55 to +150
C
CE
CB
CE
EB
CE
CE
CE
CE
CE
= –10 mA, I
Rating
= –10 V, I
= –20 V, I
= –5 V, I
= –10 V, I
= –10 V, I
= –10 V, I
= –10 V, I
= –10 V, I
–30
–20
–30
125
150
= –10 V, I
–5
Ver. BED
70 to 220
C
No-rank
Conditions
C
E
B
C
C
C
C
C
B
= 0
A4
= –1 mA
= 0
= 0
= –1 mA
= –1 mA
= –1 mA, f = 10.7 MHz
= –1 mA, f = 5 MHz
= –1 mA, f = 2 MHz
= –1 mA
0
Unit
mW
mA
°C
°C
V
V
V
Package
Marking Symbol: A4
Code
Pin Name
SSMini3-F3-B
1. Base
2. Emitter
3. Collector
Min
150
70
– 0.7
– 0.1
Typ
300
1.0
2.8
22
Max
– 0.1
–100
–10
220
MHz
Unit
µA
µA
µA
dB
pF
W
V
V
1
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DSA9G01C0L Summary of contents
Page 1
... Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Reverse transfer capacitance (Common emitter) Noise figure Reverse transfer impedance Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Rank classification Code Rank 140 FE Marking Symbol A4B Product of no-rank is not classifi ...
Page 2
DSA9G01 DSA9G01_PC-Ta P 150 125 100 120 160 ( °C ) Ambient temperature T a DSA9G01_VCEsat-IC V I CE(sat) C − −1 T ...
Page 3
SSMini3-F3-B +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Ver. BED DSA9G01 Unit: mm +0.05 0.13 − 0.02 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...