TIPL761B-S Bourns, TIPL761B-S Datasheet
TIPL761B-S
Specifications of TIPL761B-S
Related parts for TIPL761B-S
TIPL761B-S Summary of contents
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... NOTE 1: This value applies for AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS Pin electrical contact with the mounting base. RATING TIPL761 TIPL761A ...
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... TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter CEO(sus) C sustaining voltage V = 850 V CE Collector-emitter V = 1000 CES cut-off current V = 850 1000 V CE Collector cut-off V = 400 CEO current V = 450 V CE ...
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... NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS 33 Ω D45H11 BY205-400 BY205-400 RB 33 Ω ...
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... TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 100 10 1·0 0·1 1· Collector Current - A C Figure 3. BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT 1· 25°C C 1·15 1·05 0·95 0·85 0·75 0 0·2 0·4 0·6 0· Base Current - A B Figure 5 ...
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... MAXIMUM SAFE OPERATING REGIONS 10 1·0 0.1 0·01 0· AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 µ 100 µ ...