TIP31B-S Bourns, TIP31B-S Datasheet

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TIP31B-S

Manufacturer Part Number
TIP31B-S
Description
Transistors Bipolar - BJT 80V 3A NPN
Manufacturer
Bourns
Datasheet

Specifications of TIP31B-S

Product Category
Transistors Bipolar - BJT
Rohs
yes
Factory Pack Quantity
1000
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
P
Continuous base current
Continuous device dissipation at (or below) 25°C
C
U
O
Storage temperature range
L
e
e
o
n
p
a
a
t n
c
r e
d
k
a l
n i
t a
This series is currently available, but
e t
o c
m
u
n i
Designed for Complementary Use with the
TIP32 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
not recommended for new designs.
m
p
o
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
e l l
g
e
u
p
d
t c
s
u j
e
V
a r
r o
d
n i
n
BE(off)
e
t c
d
u t
i v
c
u
o i
e r
r u
e c
i t c
n
e r
3
e v
e t
= 0, R
i d
2 .
t n
s s
m
o l
m
s (
p
p i
a
e
m
e
E
d
t a
a r
S
e
= 0)
B
e
f
o i
= 0.1 Ω, V
u t
o r
N
n
= 0)
n
o
r e
e r
m
e t
a
y g
a r
( t
c
) 1
a
n
p
r o
s (
s
g
≤ 0.3 ms, duty cycle ≤ 10%.
e
e
e
b
CC
e
f
e
r o
o l
N
= 20 V.
w
o
1
e t
0
)
2
s
R
) 4
° 5
e
A
c
C
T
o
N I
n
c
f
e r
s d
a
G
s
e
e
a
e t
r i
m
e t
p
m
e
p
a r
e
a r
u t
e r
u t
e r
s (
s (
e
e
e
N
e
o
N
e t
o
e t
C
E
B
) 2
) 3
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER TRANSISTORS
TIP31
TIP31A
TIP31B
TIP31C
TIP31
TIP31A
TIP31B
TIP31C
TO-220 PACKAGE
(TOP VIEW)
S
Y
½
V
V
V
M
T
I
P
P
CBO
CEO
EBO
T
CM
I L
I
I
T
stg
C
B
tot
tot
B
L
j
C
O
B(on)
2
1
2
3
L
= 0.4 A, R
-65 to +150
-65 to +150
V
A
100
120
140
100
250
80
40
60
80
40
32
L
5
3
5
1
2
BE
U
E
= 100 Ω,
MDTRACA
U
mJ
°C
°C
°C
N
W
W
V
V
V
A
A
A
T I
1

Related parts for TIP31B-S

TIP31B-S Summary of contents

Page 1

... TO-220 PACKAGE (TOP VIEW Pin electrical contact with the mounting base TIP31 TIP31A V CBO TIP31B TIP31C TIP31 TIP31A V CEO TIP31B TIP31C V EBO tot tot ½ stg ...

Page 2

... TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter V = 100 CES cut-off current V = 120 140 V CE Collector cut-off CEO current ...

Page 3

... 0·01 1·0 10 0·1 BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 25°C C 0·01 0·1 1· Collector Current - A C Figure 3. TIP31, TIP31A, TIP31B, TIP31C vs BASE CURRENT TCS631AB 1·0 10 100 1000 I - Base Current - mA B Figure 2. TCS631AC 10 3 ...

Page 4

... TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP31 TIP31A TIP31B TIP31C 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4 ...

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