PBSS4320X /T3 NXP Semiconductors, PBSS4320X /T3 Datasheet
PBSS4320X /T3
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PBSS4320X /T3 Summary of contents
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DATA SHEET dbook, halfpage PBSS4320X NPN low V Product data sheet Supersedes data of 2003 Dec 15 DISCRETE SEMICONDUCTORS M3D109 (BISS) transistor CEsat 2004 Nov 03 ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage V • High collector current capability: I • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I base current (DC) ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 2 handbook, halfpage P tot (W) (1) 1.6 (2) 1.2 (3) 0.8 (4) 0 (1) Ceramic PCB (3) FR4 PCB mounting pad for collector. 2 (2) FR4 PCB copper (4) Standard footprint. mounting pad for collector. Fig.2 Power derating curves. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to soldering point th(j-s) Notes 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector Device mounted on a FR4 printed-circuit board ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat th(j-a) (K/W) duty cycle = 1. 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0. −1 10 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm Fig.4 Transient thermal impedance as a function of pulse time; typical values th(j-a) (K/W) duty cycle = ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I collector-emitter cut-off current CES I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage R equivalent on-resistance CEsat V base-emitter saturation voltage ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 800 handbook, halfpage h FE 600 (1) (2) 400 (3) 200 0 − 100 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat 1.2 handbook, halfpage V BEsat (V) 1 0.8 0.6 0.4 0.2 − 20 −55 °C. (1) T amb = 25 °C. (2) T amb = 100 °C. (3) T amb Fig.10 Base-emitter saturation voltage as a function of collector current; typical values CEsat (Ω ...
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... NXP Semiconductors NPN low V (BISS) transistor CEsat PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Nov ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...