EMA3T2R ROHM Semiconductor, EMA3T2R Datasheet

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EMA3T2R

Manufacturer Part Number
EMA3T2R
Description
Transistors Switching - Resistor Biased TRANS DIGI BJT PNP 50V 100MA 5PIN
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of EMA3T2R

Rohs
yes
Configuration
Dual Common Emitter
Transistor Polarity
PNP
Typical Input Resistor
4.7 KOhms
Mounting Style
SMD/SMT
Package / Case
EMT-5
Dc Collector/base Gain Hfe Min
100
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
lFeatures
1) Built-In Biasing Resistors.
2) Two DTA143T chips in one package.
3) Emitter-common type.
4) Built-in bias resistors enable the configuration of
5) The bias resistors consist of thin-film resistors
6) Only the on/off conditions need to be set for
7) Lead Free/RoHS Compliant.
lApplication
Interface circuit, Driver circuit
lPackaging specifications
EMA3
UMA3N
FMA3A
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
an inverter circuit without connecting external
input resistors (see inner circuit).
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
operation, making the circuit design easy.
Part No.
Parameter
I
C(MAX.)
V
R
CEO
PNP -100mA -50V Complex Digital Transistors
1
EMA3 / UMA3N / FMA3A
Package
EMT5
UMT5
SMT5
Tr1 and Tr2
-100mA
4.7kW
-50V
Package
(mm)
1616
2021
2928
size
Taping
code
T148
T2R
TR
1/6
EMT5
SMT5
Collector
lOutline
lInner circuit
Reel size
Base
(3)
(4)
(mm)
EMA3 / UMA3N
180
180
180
(5)
(1)
(SC-107BB)
(4)
(Bias Resistor Built-in Transistors)
(SC-74A)
(2)
FMA3A
Emitter
EMA3
(2)
(3)
(3)
(5)
Tape width
(1)
(mm)
Collector
(4)
Base
(2)
8
8
8
(1)
(5)
UMT5
unit (pcs)
Collector
ordering
Base
SOT-353 (SC-88A)
Basic
8,000
3,000
3,000
(3)
(2)
(4)
UMA3N
2012.06 - Rev.B
FMA3A
Emitter
(5)
(4)
(3)
Datasheet
Marking
(2)
A3
A3
A3
(1)
Collector
Base
(1)
(5)

Related parts for EMA3T2R

EMA3T2R Summary of contents

Page 1

... EMA3 / UMA3N / FMA3A PNP -100mA -50V Complex Digital Transistors Parameter Tr1 and Tr2 V -50V CEO I -100mA C(MAX.) R 4.7kW 1 lFeatures 1) Built-In Biasing Resistors. 2) Two DTA143T chips in one package. 3) Emitter-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) ...

Page 2

EMA3 / UMA3N / FMA3A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Range of storage temperature lElectrical characteristics(Ta = 25°C) <For ...

Page 3

EMA3 / UMA3N / FMA3A lElectrical characteristic curves(Ta = 25°C) Fig.1 Grounded emitter propagation characteristics - - -0.1 Ta=100ºC -0.01 -0.001 0 -0.5 -1 BASE TO EMITTER VOLTAGE : V Fig.3 DC Current gain vs. Collector ...

Page 4

EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) EMT5 b e DIM DIM Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All ...

Page 5

EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) UMT5 DIM DIM Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All ...

Page 6

EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) SMT5 DIM DIM Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All ...

Page 7

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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