PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet

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PBSS302PD T/R

Manufacturer Part Number
PBSS302PD T/R
Description
Transistors Bipolar - BJT PNP 40V 4A LOW SAT
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PD T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
110 MHz
Dc Collector/base Gain Hfe Min
200 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS302PD,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS302PD
40 V, 4 A PNP low V
Rev. 02 — 6 December 2007
Ultra low collector-emitter saturation voltage V
4 A continuous collector current capability I
Up to 15 A peak current
Very low collector-emitter saturation resistance
High efficiency due to less heat generation
Power management functions
Charging circuits
DC-to-DC conversion
MOSFET gate driving
Power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
Conditions
open base
single pulse;
t
I
I
p
C
B
(BISS) transistor
= 600 mA
= 6 A;
1 ms
C
CEsat
2
O
[1]
[2]
3
, standard footprint.
Min
-
-
-
-
Typ
-
-
-
55
Product data sheet
Max
75
40
4
15
Unit
V
A
A
m

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PBSS302PD T/R Summary of contents

Page 1

PBSS302PD PNP low V Rev. 02 — 6 December 2007 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features I Ultra low collector-emitter saturation voltage ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PD 4. Marking Table 4. Type number PBSS302PD 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

Page 5

... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 6

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS302PD_2 Product data sheet Characteristics Conditions collector-base cut-off ...

Page 7

... NXP Semiconductors 600 ( 400 (2) (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 0.8 0 amb Fig 7. Base-emitter voltage as a function of collector current ...

Page 8

... NXP Semiconductors 1 V CEsat ( ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) (1) T ...

Page 9

... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS302PD_2 Product data sheet (probe) oscilloscope 450 0 Bon Rev. 02 — 6 December 2007 ...

Page 10

... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS302PD [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 11

... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS302PD_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area ...

Page 12

... Release date PBSS302PD_2 20071206 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General • Section 1.4 “Quick reference • ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...

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