PBSS302PD T/R

Manufacturer Part NumberPBSS302PD T/R
DescriptionTransistors Bipolar - BJT PNP 40V 4A LOW SAT
ManufacturerNXP Semiconductors
PBSS302PD T/R datasheet
 

Specifications of PBSS302PD T/R

Product CategoryTransistors Bipolar - BJTRohsyes
ConfigurationSingleTransistor PolarityPNP
Collector- Base Voltage Vcbo40 VCollector- Emitter Voltage Vceo Max40 V
Emitter- Base Voltage Vebo5 VCollector-emitter Saturation Voltage5 V
Gain Bandwidth Product Ft110 MHzDc Collector/base Gain Hfe Min200 at 0.5 A at 2 V
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseTSOPContinuous Collector Current4 A
Maximum Power Dissipation2500 mWMinimum Operating Temperature- 65 C
Factory Pack Quantity3000Part # AliasesPBSS302PD,115
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PBSS302PD
40 V, 4 A PNP low V
Rev. 02 — 6 December 2007
1. Product profile
1.1 General description
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS302ND.
1.2 Features
I
Ultra low collector-emitter saturation voltage V
I
4 A continuous collector current capability I
I
Up to 15 A peak current
I
Very low collector-emitter saturation resistance
I
High efficiency due to less heat generation
1.3 Applications
I
Power management functions
I
Charging circuits
I
DC-to-DC conversion
I
MOSFET gate driving
I
Power switches (e.g. motors, fans)
I
Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al
[2]
Pulse test: t
(BISS) transistor
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
CEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage
open base
collector current
peak collector current
single pulse;
t
1 ms
p
collector-emitter
I
= 6 A;
C
saturation resistance
I
= 600 mA
B
300 s;
0.02.
p
Product data sheet
CEsat
C
Min
Typ
Max
-
-
40
[1]
-
-
4
-
-
15
[2]
-
55
75
O
, standard footprint.
2
3
Unit
V
A
A
m

PBSS302PD T/R Summary of contents

  • Page 1

    PBSS302PD PNP low V Rev. 02 — 6 December 2007 1. Product profile 1.1 General description PNP low V small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features I Ultra low collector-emitter saturation voltage ...

  • Page 2

    ... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS302PD 4. Marking Table 4. Type number PBSS302PD 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

  • Page 3

    ... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol amb T stg [1] Device mounted on a ceramic PCB, Al [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...

  • Page 4

    ... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm ...

  • Page 5

    ... NXP Semiconductors th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration ...

  • Page 6

    ... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS302PD_2 Product data sheet Characteristics Conditions collector-base cut-off ...

  • Page 7

    ... NXP Semiconductors 600 ( 400 (2) (3) 200 ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 1.2 0.8 0 amb Fig 7. Base-emitter voltage as a function of collector current ...

  • Page 8

    ... NXP Semiconductors 1 V CEsat ( ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) (1) T ...

  • Page 9

    ... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS302PD_2 Product data sheet (probe) oscilloscope 450 0 Bon Rev. 02 — 6 December 2007 ...

  • Page 10

    ... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBSS302PD [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

  • Page 11

    ... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 17. Wave soldering footprint SOT457 (SC-74) PBSS302PD_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 6 December 2007 PBSS302PD PNP low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area ...

  • Page 12

    ... Release date PBSS302PD_2 20071206 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Section 1.1 “General • Section 1.4 “Quick reference • ...

  • Page 13

    ... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

  • Page 14

    ... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...