PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
PBSS302PD_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
Symbol
T
T
T
Fig 1. Power derating curves
j
amb
stg
Device mounted on a ceramic PCB, Al
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Operated under pulsed conditions: duty cycle
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, mounting pad for collector 1 cm
(4) FR4 PCB, standard footprint
Limiting values
Parameter
junction temperature
ambient temperature
storage temperature
(mW)
Rev. 02 — 6 December 2007
P
1600
1200
2
tot
O
800
400
3
0
, standard footprint
…continued
75
25
2
(1)
(2)
(3)
(4)
O
Conditions
3
, standard footprint.
25
2
2
10 % and pulse width t
40 V, 4 A PNP low V
75
125
T
006aaa270
amb
( C)
Min
-
175
p
65
65
PBSS302PD
10 ms.
CEsat
© NXP B.V. 2007. All rights reserved.
Max
150
+150
+150
(BISS) transistor
Unit
C
C
C
2
2
.
.
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