PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 10

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
9. Package outline
10. Packing information
PBSS302PD_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
Type number Package
PBSS302PD
Fig 15. Package outline SOT457 (SC-74)
For further information and the availability of packing methods, see
T1: normal taping
T2: reverse taping
Packing methods
SOT457
3.0
2.5
Rev. 02 — 6 December 2007
Dimensions in mm
1.7
1.3
Description
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
pin 1 index
1
6
0.95
3.1
2.7
1.9
5
2
40 V, 4 A PNP low V
4
3
0.40
0.25
0.6
0.2
Section
[1]
1.1
0.9
PBSS302PD
0.26
0.10
04-11-08
[2]
[3]
14.
CEsat
Packing quantity
3000
-115
-125
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
10000
-135
-165
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