PBSS302PD T/R

Manufacturer Part NumberPBSS302PD T/R
DescriptionTransistors Bipolar - BJT PNP 40V 4A LOW SAT
ManufacturerNXP Semiconductors
PBSS302PD T/R datasheet
 


Specifications of PBSS302PD T/R

Product CategoryTransistors Bipolar - BJTRohsyes
ConfigurationSingleTransistor PolarityPNP
Collector- Base Voltage Vcbo40 VCollector- Emitter Voltage Vceo Max40 V
Emitter- Base Voltage Vebo5 VCollector-emitter Saturation Voltage5 V
Gain Bandwidth Product Ft110 MHzDc Collector/base Gain Hfe Min200 at 0.5 A at 2 V
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseTSOPContinuous Collector Current4 A
Maximum Power Dissipation2500 mWMinimum Operating Temperature- 65 C
Factory Pack Quantity3000Part # AliasesPBSS302PD,115
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NXP Semiconductors
11. Soldering
Fig 16. Reflow soldering footprint SOT457 (SC-74)
5.05
Fig 17. Wave soldering footprint SOT457 (SC-74)
PBSS302PD_2
Product data sheet
3.45
1.95
0.95
3.30
2.825
1.60
1.70
3.10
3.20
Dimensions in mm
5.30
1.40
4.30
Dimensions in mm
Rev. 02 — 6 December 2007
PBSS302PD
40 V, 4 A PNP low V
(BISS) transistor
CEsat
solder lands
solder resist
0.45 0.55
occupied area
solder paste
msc422
0.45
1.45 4.45
msc423
© NXP B.V. 2007. All rights reserved.
solder lands
solder resist
occupied area
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