PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 12

• Manufacturer Part Number: PBSS302PD T/R
• Description: Transistors Bipolar - BJT PNP 40V 4A LOW SAT
• Manufacturer: NXP Semiconductors

Specifications of PBSS302PD T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 110 MHz
• Dc Collector/base Gain Hfe Min: 200 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 4 A
• Maximum Power Dissipation: 2500 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS302PD,115

NXP Semiconductors
12. Revision history
Table 9.
PBSS302PD_2
Product data sheet
Document ID
PBSS302PD_2
Modifications:
PBSS302PD_1
Revision history
Release date
20071206
20050418
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The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Section 1.1 “General
Section 1.4 “Quick reference
Figure
Table
Table
Table
Section 11
Section 13 “Legal
5: I
5: I
6: typing error for maximum value on 6 cm
2, 3,
CM
BM
“Soldering”: added
4
conditions amended
conditions amended
and 6: amended
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 6 December 2007
information”: updated
description”: amended
data”: I
CM
conditions amended
40 V, 4 A PNP low V
Change notice
-
-
2
footprint amended
PBSS302PD
Supersedes
PBSS302PD_1
-
CEsat
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
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