PBSS302PD T/R NXP Semiconductors, PBSS302PD T/R Datasheet - Page 4

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PBSS302PD T/R

Manufacturer Part Number
PBSS302PD T/R
Description
Transistors Bipolar - BJT PNP 40V 4A LOW SAT
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS302PD T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
110 MHz
Dc Collector/base Gain Hfe Min
200 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
4 A
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS302PD,115
NXP Semiconductors
6. Thermal characteristics
PBSS302PD_2
Product data sheet
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Z
(K/W)
th(j-a)
10
10
10
10
1
3
2
1
10
FR4 PCB, standard footprint
duty cycle =
5
0.05
0.02
0.01
0.5
0.2
0.1
1
0
0.75
0.33
10
4
Table 6.
[1]
[2]
[3]
[4]
[5]
Symbol
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
Device mounted on a ceramic PCB, Al
Operated under pulsed conditions: duty cycle
10
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
3
10
Rev. 02 — 6 December 2007
2
10
1
2
O
3
, standard footprint.
Conditions
in free air
10 % and pulse width t
1
40 V, 4 A PNP low V
[1][5]
10
[1]
[2]
[3]
[4]
Min
-
-
-
-
-
-
p
PBSS302PD
10 ms.
CEsat
10
Typ
-
-
-
-
-
-
2
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
p
006aaa271
(s)
Max
350
208
167
113
50
45
10
3
2
2
.
.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
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