PBSS305ND T/R NXP Semiconductors, PBSS305ND T/R Datasheet

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PBSS305ND T/R

Manufacturer Part Number
PBSS305ND T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS305ND T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
100 V
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
3 A
Gain Bandwidth Product Ft
140 MHz
Dc Collector/base Gain Hfe Min
170 at 0.5 A at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Dc Current Gain Hfe Max
170 at 0.5 A at 2 V
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS305ND,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS305PD.
I
I
I
I
I
I
I
I
I
I
I
Table 1.
[1]
[2]
Symbol
V
I
I
R
C
CM
CEO
CEsat
PBSS305ND
100 V, 3 A NPN low V
Rev. 02 — 7 December 2007
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Automotive applications
Device mounted on a ceramic PCB, Al
Pulse test: t
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
p
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
300 s;
0.02.
CEsat
FE
) at high I
2
Conditions
open base
single pulse;
t
I
I
O
C
p
C
B
3
= 200 mA
, standard footprint.
= 2 A;
and I
1 ms
(BISS) transistor
CM
C
CEsat
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
73
Product data sheet
Max
100
3
4
95
Unit
V
A
A
m

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PBSS305ND T/R Summary of contents

Page 1

... Low collector-emitter saturation voltage V I High collector current capability I I High collector current gain (h I High efficiency due to less heat generation I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I High-voltage DC-to-DC conversion I High-voltage MOSFET gate driving I High-voltage motor control I High-voltage power switches (e ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS305ND 4. Marking Table 4. Type number PBSS305ND PBSS305ND_2 Product data sheet Pinning Description collector collector base emitter collector collector Ordering information Package Name Description SC-74 plastic surface-mounted package (TSOP6); 6 leads Marking codes Rev. 02 — ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, mounting pad for collector 1 cm (4) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 5

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 10 0.02 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 6

... NXP Semiconductors th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. Ceramic PCB, Al ...

Page 7

... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS305ND_2 Product data sheet Characteristics Conditions collector-base cut-off V = 100 ...

Page 8

... NXP Semiconductors 600 h FE (1) 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 6. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) ( amb ...

Page 9

... NXP Semiconductors 1 V CEsat ( ( 100 C amb ( amb ( amb Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) (1) T ...

Page 10

... NXP Semiconductors 8. Test information Fig 14. BISS transistor switching time definition Fig 15. Test circuit for switching times PBSS305ND_2 Product data sheet (probe) oscilloscope 450 9 0 Bon Boff Rev. 02 — 7 December 2007 ...

Page 11

... NXP Semiconductors 9. Package outline Fig 16. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS305ND [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 12

... NXP Semiconductors 11. Soldering Fig 17. Reflow soldering footprint SOT457 (SC-74) 5.05 Fig 18. Wave soldering footprint SOT457 (SC-74) PBSS305ND_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 7 December 2007 PBSS305ND 100 NPN low V (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area ...

Page 13

... Document ID Release date PBSS305ND_2 20071207 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Table • Section 13 “Legal ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history ...

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