2PB709ARW T/R NXP Semiconductors, 2PB709ARW T/R Datasheet - Page 3

• Manufacturer Part Number: 2PB709ARW T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 2PB709ARW T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 70 MHz
• Dc Collector/base Gain Hfe Min: 210 at 2 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-323
• Continuous Collector Current: 0.1 A
• Dc Current Gain Hfe Max: 210 at 2 mA at 10 V
• Maximum Power Dissipation: 200 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: 2PB709ARW,115

NXP Semiconductors
6. Thermal characteristics
2PB709ART_1
Product data sheet
Table 6.
[1]
Symbol
R
R
Fig 1. Power derating curve
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
FR4 PCB, standard footprint
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Thermal characteristics
(mW)
P
tot
Rev. 01 — 19 March 2007
300
200
100
0
75
25
Conditions
in free air
25
45 V, 100 mA PNP general-purpose transistor
75
125
T
006aaa990
[1]
amb
Min
-
-
( C)
175
2PB709ART
Typ
-
-
© NXP B.V. 2007. All rights reserved.
Max
500
140
Unit
K/W
K/W
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