2PB709ART T/R NXP Semiconductors, 2PB709ART T/R Datasheet - Page 5

• Manufacturer Part Number: 2PB709ART T/R
• Description: Transistors Bipolar - BJT PNP TRANSISTOR
• Manufacturer: NXP Semiconductors

Specifications of 2PB709ART T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 70 MHz
• Dc Collector/base Gain Hfe Min: 210 at 2 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-236AB
• Dc Current Gain Hfe Max: 210 at 2 mA at 10 V
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: 2PB709ART,215

NXP Semiconductors
2PB709ART_1
Product data sheet
Fig 3. DC current gain as a function of collector
Fig 5. Base-emitter saturation voltage as a function of
V
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
h
BEsat
(V)
FE
500
400
300
200
100
1.3
0.9
0.5
0.1
0
V
current; typical values
I
collector current; typical values
10
10
C
amb
amb
amb
amb
amb
amb
CE
/I
B
1
1
= 10 V
= 10
= 150 C
= 25 C
= 55 C
= 55 C
= 25 C
= 150 C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
I
I
C
C
006aab028
(mA)
006aab030
(mA)
10
10
Rev. 01 — 19 March 2007
2
2
Fig 4. Collector current as a function of
Fig 6. Collector-emitter saturation voltage as a
V
(1) T
(2) T
(3) T
CEsat
(V)
(A)
10
10
I
0.08
0.06
0.04
0.02
C
0.1
45 V, 100 mA PNP general-purpose transistor
0
1
1
2
T
collector-emitter voltage; typical values
10
I
function of collector current; typical values
C
0
amb
amb
amb
amb
/I
B
1
= 10
= 25 C
= 150 C
= 25 C
= 55 C
2
I
B
1
(1)
(2)
(3)
(mA) = 0.75
4
0.65
0.55
0.45
0.35
0.25
0.15
0.05
2PB709ART
6
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
I
© NXP B.V. 2007. All rights reserved.
C
8
(mA)
006aab029
006aab031
V
CE
(V)
10
10
2
5 of 10