PBSS4160DPN T/R NXP Semiconductors, PBSS4160DPN T/R Datasheet
PBSS4160DPN T/R
Manufacturer Part Number
PBSS4160DPN T/R
Description
Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet
1.PBSS4160DPN_TR.pdf
(18 pages)
Specifications of PBSS4160DPN T/R
Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
220 MHz
Dc Collector/base Gain Hfe Min
250 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Continuous Collector Current
1 A at NPN, 0.9 A at PNP
Maximum Power Dissipation
700 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS4160DPN,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN/PNP low V
(SC-74) Surface Mounted Device (SMD) plastic package.
Table 1.
[1]
[2]
Symbol
TR1 (NPN)
V
I
I
R
TR2 (PNP)
V
I
I
R
C
CM
C
CM
CEO
CEO
CEsat
CEsat
PBSS4160DPN
60 V, 1 A NPN/PNP low V
Rev. 03 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability: I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Complementary MOSFET driver
Half and full bridge motor drivers
Dual low power switches (e.g. motors, fans)
Automotive applications
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Pulse test: t
Parameter
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
collector-emitter voltage
collector current (DC)
peak collector current
collector-emitter saturation
resistance
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
FE
) at high I
C
Conditions
open base
single pulse; t
I
open base
single pulse; t
I
C
C
CEsat
and I
= 1 A; I
= −1 A; I
CM
C
(BISS) transistor
CEsat
B
B
= 100 mA
= −100 mA
p
p
≤ 1 ms
≤ 1 ms
[1]
[2]
[1]
[2]
-
-
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
200
-
-
-
250
Max
60
1
2
250
−60
−900
−2
330
2
.
Unit
V
A
A
mΩ
V
mA
A
mΩ
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