PBSS305PD T/R NXP Semiconductors, PBSS305PD T/R Datasheet

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PBSS305PD T/R

Manufacturer Part Number
PBSS305PD T/R
Description
Transistors Bipolar - BJT TRANS BISS TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PBSS305PD T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
100 V
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
2 A
Gain Bandwidth Product Ft
110 MHz
Dc Collector/base Gain Hfe Min
175 at 500 mA at 2 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TSOP
Dc Current Gain Hfe Max
175 at 500 mA at 2 V
Maximum Power Dissipation
2500 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
PBSS305PD,115
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS305ND.
Table 1.
[1]
[2]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS305PD
100 V, 2 A PNP low V
Rev. 02 — 8 December 2009
Low collector-emitter saturation voltage V
High collector current capability I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Thin Film Transistor (TFT) backlight inverter
Automotive applications
Device mounted on a ceramic PCB, Al
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
CEsat
Quick reference data
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
CEsat
FE
Conditions
open base
single pulse;
t
I
I
) at high I
p
C
B
2
O
C
≤ 1 ms
= −200 mA
= −2 A;
3
, standard footprint.
and I
(BISS) transistor
CM
C
CEsat
[1]
[2]
Min
-
-
-
-
Typ
-
-
-
88
Product data sheet
Max
−100
−2
−3
125
Unit
V
A
A

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PBSS305PD T/R Summary of contents

Page 1

... Features Low collector-emitter saturation voltage V High collector current capability I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor control High-voltage power switches (e.g. motors, fans) ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS305PD 4. Marking Table 4. Type number PBSS305PD PBSS305PD_2 Product data sheet Pinning Description collector collector base emitter collector collector Ordering information Package Name Description SC-74 plastic surface-mounted package (TSOP6); 6 leads ...

Page 3

... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on a ceramic PCB, Al ...

Page 4

... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, mounting pad for collector 1 cm (4) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...

Page 5

... NXP Semiconductors 3 10 duty cycle = Z th(j-a) 1 (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 10 0.02 0. −1 10 −5 − FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) duty cycle = (K/ 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 6

... NXP Semiconductors th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 − FR4 PCB, mounting pad for collector 6 cm Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. −1 10 −5 −4 ...

Page 7

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter CES cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter BEsat saturation voltage V base-emitter turn-on BEon voltage ...

Page 8

... NXP Semiconductors 600 h FE (1) 400 (2) 200 (3) 0 −1 −10 −1 −10 −10 = − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 6. DC current gain as a function of collector current; typical values −1 (V) −0.8 (1) (2) −0.4 (3) 0 −1 − ...

Page 9

... NXP Semiconductors −1 V CEsat (V) −1 −10 −2 −10 −1 −10 −1 −10 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values CEsat (Ω −1 10 − ...

Page 10

... NXP Semiconductors 8. Test information − − Fig 14. BISS transistor switching time definition V Fig 15. Test circuit for switching times PBSS305PD_2 Product data sheet (probe) oscilloscope 450 Ω −9 − −0 ...

Page 11

... NXP Semiconductors 9. Package outline Fig 16. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS305PD [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 12

... NXP Semiconductors 11. Soldering 3.30 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) 5.05 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) PBSS305PD_2 Product data sheet 100 PNP low V 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 02 — 8 December 2009 PBSS305PD (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste ...

Page 13

... Release date PBSS305PD_2 20091208 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 5 “Transient thermal impedance from junction to ambient as a function of pulse duration ...

Page 14

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 15

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 Packing information . . . . . . . . . . . . . . . . . . . . 11 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 13 Legal information ...

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