2PB709AS T/R NXP Semiconductors, 2PB709AS T/R Datasheet - Page 6

• Manufacturer Part Number: 2PB709AS T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of 2PB709AS T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 45 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 6 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 290 at 2 mA at 10 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-346
• Continuous Collector Current: 0.1 A
• Dc Current Gain Hfe Max: 290 at 2 mA at 10 V
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: 2PB709AS,115

NXP Semiconductors
8. Package outline
9. Packing information
2PB709ART_1
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
2PB709ART
Fig 7. Package outline SOT23 (TO-236AB)
For further information and the availability of packing methods, see
Packing methods
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 01 — 19 March 2007
1.4
1.2
Description
4 mm pitch, 8 mm tape and reel
1
3.0
2.8
1.9
45 V, 100 mA PNP general-purpose transistor
3
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
0.15
0.09
[1]
2PB709ART
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2007. All rights reserved.
10000
-235
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