2PB709ART /T3

Manufacturer Part Number2PB709ART /T3
DescriptionTransistors Bipolar - BJT PNP TRANSISTOR
ManufacturerNXP Semiconductors
2PB709ART /T3 datasheet
 


Specifications of 2PB709ART /T3

Product CategoryTransistors Bipolar - BJTRohsyes
ConfigurationSingleTransistor PolarityPNP
Collector- Base Voltage Vcbo45 VCollector- Emitter Voltage Vceo Max45 V
Emitter- Base Voltage Vebo6 VMaximum Dc Collector Current0.1 A
Gain Bandwidth Product Ft70 MHzDc Collector/base Gain Hfe Min210 at 2 mA at 10 V
Maximum Operating Temperature+ 150 CMounting StyleSMD/SMT
Package / CaseTO-236ABDc Current Gain Hfe Max210 at 2 mA at 10 V
Maximum Power Dissipation250 mWMinimum Operating Temperature- 65 C
Factory Pack Quantity10000Part # Aliases2PB709ART,235
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2PB709ART
45 V, 100 mA PNP general-purpose transistor
Rev. 01 — 19 March 2007
1. Product profile
1.1 General description
PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device
(SMD) plastic package.
NPN complement: 2PD601ART.
1.2 Features
I
General-purpose transistor
I
Small SMD plastic package
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol Parameter
V
CEO
I
C
h
FE
2. Pinning information
Table 2.
Pin
1
2
3
Quick reference data
Conditions
collector-emitter voltage
open base
collector current
DC current gain
V
= 10 V;
CE
I
= 2 mA
C
Pinning
Description
base
emitter
collector
Product data sheet
Min
Typ
Max
-
-
45
-
-
100
210
-
340
Simplified outline
Symbol
3
1
1
2
sym013
Unit
V
mA
3
2

2PB709ART /T3 Summary of contents

  • Page 1

    V, 100 mA PNP general-purpose transistor Rev. 01 — 19 March 2007 1. Product profile 1.1 General description PNP general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: 2PD601ART. 1.2 Features I General-purpose ...

  • Page 2

    ... NXP Semiconductors 3. Ordering information Table 3. Type number 2PB709ART 4. Marking Table 4. Type number 2PB709ART [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO ...

  • Page 3

    ... NXP Semiconductors Fig 1. Power derating curve 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2PB709ART_1 Product data sheet 300 P tot (mW) 200 100 FR4 PCB, standard footprint Thermal characteristics Parameter thermal resistance from ...

  • Page 4

    ... NXP Semiconductors th(j-a) 0.75 (K/W) 0.50 0. 0.20 0.10 0.05 0. FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values 7. Characteristics Table unless otherwise specified. amb Symbol Parameter I CBO I EBO ...

  • Page 5

    ... NXP Semiconductors 500 h FE (1) 400 300 (2) 200 (3) 100 ( 150 C amb ( amb ( amb Fig 3. DC current gain as a function of collector current; typical values 1.3 V BEsat (V) 0.9 (1) (2) 0.5 ( amb ...

  • Page 6

    ... NXP Semiconductors 8. Package outline Fig 7. Package outline SOT23 (TO-236AB) 9. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number 2PB709ART [1] For further information and the availability of packing methods, see 2PB709ART_1 Product data sheet 45 V, 100 mA PNP general-purpose transistor 3 ...

  • Page 7

    ... NXP Semiconductors 10. Soldering Fig 8. Reflow soldering footprint SOT23 (TO-236AB) 4.60 Fig 9. Wave soldering footprint SOT23 (TO-236AB) 2PB709ART_1 Product data sheet 2.90 2.50 0.85 2 3.00 1.30 0.85 3 0.50 (3x) 0.60 (3x) 1.00 3.30 3.40 1.20 (2x 4.00 1.20 3 2.80 4.50 Rev. 01 — 19 March 2007 2PB709ART 45 V, 100 mA PNP general-purpose transistor 1 solder lands 2.70 solder resist solder paste occupied area ...

  • Page 8

    ... NXP Semiconductors 11. Revision history Table 9. Revision history Document ID Release date 2PB709ART_1 20070319 2PB709ART_1 Product data sheet 45 V, 100 mA PNP general-purpose transistor Data sheet status Change notice Product data sheet - Rev. 01 — 19 March 2007 2PB709ART Supersedes - © NXP B.V. 2007. All rights reserved. ...

  • Page 9

    ... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...

  • Page 10

    ... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 12 Legal information ...