2PB709ART /T3 NXP Semiconductors, 2PB709ART /T3 Datasheet - Page 8

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2PB709ART /T3

Manufacturer Part Number
2PB709ART /T3
Description
Transistors Bipolar - BJT PNP TRANSISTOR
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 2PB709ART /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
45 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
70 MHz
Dc Collector/base Gain Hfe Min
210 at 2 mA at 10 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
TO-236AB
Dc Current Gain Hfe Max
210 at 2 mA at 10 V
Maximum Power Dissipation
250 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
10000
Part # Aliases
2PB709ART,235
NXP Semiconductors
11. Revision history
Table 9.
2PB709ART_1
Product data sheet
Document ID
2PB709ART_1
Revision history
Release date
20070319
Data sheet status
Product data sheet
Rev. 01 — 19 March 2007
45 V, 100 mA PNP general-purpose transistor
Change notice
-
2PB709ART
Supersedes
-
© NXP B.V. 2007. All rights reserved.
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