PBSS4160DS T/R NXP Semiconductors, PBSS4160DS T/R Datasheet
PBSS4160DS T/R
Specifications of PBSS4160DS T/R
Related parts for PBSS4160DS T/R
PBSS4160DS T/R Summary of contents
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... Features Low collector-emitter saturation voltage V High collector current capability: I High collector current gain (h High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Dual low power switches (e.g. motors, fans) Automotive applications 1.4 Quick reference data Table 1 ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4160DS 4. Marking Table 4. Type number PBSS4160DS 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Per transistor V collector-base voltage CBO V collector-emitter voltage ...
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... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter P total power dissipation tot Per device P total power dissipation tot T junction temperature j T ambient temperature amb T storage temperature stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al ...
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... NXP Semiconductors δ th(j-a) (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. −5 − FR4 PCB, mounting pad for collector 1 cm Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values th(j-a) δ (K/W) 0.75 0. 0.33 0.20 0.10 0.05 10 0.02 0. −5 − Ceramic PCB standard footprint ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Per transistor I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off [1] Pulse test: t PBSS4160DS_4 Product data sheet NPN/NPN low V Characteristics C unless otherwise specified. Parameter ...
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... NXP Semiconductors 800 h FE (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 5. DC current gain as a function of collector current; typical values 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 − ...
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... NXP Semiconductors 1.2 V BEsat (V) 1.0 (1) 0.8 (2) 0.6 (3) 0.4 0.2 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 2.0 I (mA (A) 52.0 1.6 39.0 26.0 1.2 13.0 0.8 0 °C T amb Fig 11. Collector current as a function of collector-emitter voltage ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition I Fig 14. Test circuit for switching times PBSS4160DS_4 Product data sheet NPN/NPN low (probe) oscilloscope 450 Ω −25 mA open 100 Ω 0.5 A ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4160DS [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...
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... NXP Semiconductors 11. Soldering 3.30 Dimensions in mm Fig 16. Reflow soldering footprint 5.05 Dimensions in mm Fig 17. Wave soldering footprint PBSS4160DS_4 Product data sheet NPN/NPN low V 3.45 1.95 0.95 2.825 1.60 1.70 3.10 3.20 5.30 1.40 4.30 Rev. 04 — 11 December 2009 PBSS4160DS (BISS) transistor CEsat solder lands solder resist 0.45 0.55 occupied area solder paste msc422 solder lands 0 ...
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... Table 9. Revision history Document ID Release date PBSS4160DS_4 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 17 “Wave soldering PBSS4160DS_3 20060209 PBSS4160DS_2 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 13 Legal information ...