PXT4403 T/R NXP Semiconductors, PXT4403 T/R Datasheet

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PXT4403 T/R

Manufacturer Part Number
PXT4403 T/R
Description
Transistors Bipolar - BJT TRANS SW TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PXT4403 T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
PNP
Collector- Base Voltage Vcbo
40 V
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
200 MHz
Dc Collector/base Gain Hfe Min
30 at 0.1 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Continuous Collector Current
0.6 A
Maximum Power Dissipation
1100 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
1000
Part # Aliases
PXT4403,115
Product data sheet
Supersedes data of 1999 Apr 14
dbook, halfpage
DATA SHEET
PXT4403
PNP switching transistor
DISCRETE SEMICONDUCTORS
M3D109
2004 Nov 22

Related parts for PXT4403 T/R

PXT4403 T/R Summary of contents

Page 1

DATA SHEET dbook, halfpage PXT4403 PNP switching transistor Product data sheet Supersedes data of 1999 Apr 14 DISCRETE SEMICONDUCTORS M3D109 2004 Nov 22 ...

Page 2

... NXP Semiconductors PNP switching transistor FEATURES • High current (max. 600 mA) • Low voltage (max. 40 V). APPLICATIONS • Switching and linear amplification. DESCRIPTION PNP switching transistor in a SOT89 plastic package. NPN complement: PXT4401. MARKING TYPE NUMBER PXT4403 *2T Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...

Page 4

... NXP Semiconductors PNP switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th(j-a) ambient R thermal resistance from junction to th(j-s) soldering point Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector ...

Page 5

... NXP Semiconductors PNP switching transistor (K/W) ( (2) (3) (4) (5) (6) (7) 10 (8) (9) (10) 1 −5 − Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm (1) δ (3) δ = 0.5. (2) δ = 0.75. (4) δ = 0.33. Fig.4 Transient thermal impedance as a function of pulse time; typical values. ...

Page 6

... NXP Semiconductors PNP switching transistor CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO I emitter-base cut-off current EBO h DC current gain FE V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat C collector capacitance c C emitter capacitance e f transition frequency T Switching times (between 10% and 90% levels) ...

Page 7

... NXP Semiconductors PNP switching transistor 300 h FE 200 100 0 −1 −10 −1 handbook, full pagewidth = −9 500 µ µ Ω 325 Ω 325 Ω −29 3 Ω. Oscilloscope input impedance Z i 2004 Nov 22 − ...

Page 8

... NXP Semiconductors PNP switching transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Nov ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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