BC858BWFT106 ROHM Semiconductor, BC858BWFT106 Datasheet

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BC858BWFT106

Manufacturer Part Number
BC858BWFT106
Description
Transistors Bipolar - BJT SOT-323 PNP
Manufacturer
ROHM Semiconductor
Datasheet

Specifications of BC858BWFT106

Product Category
Transistors Bipolar - BJT
Rohs
yes
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SC-70
Factory Pack Quantity
3000
Transistors
PNP General Purpose Transistor
BC858BW / BC858B
1) BV
2) Complements the BC848B / BC848BW.
Collector cutoff current
Transition frequency
Output capacitance
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Features
When mounted on 7 × 5 × 0.6 mm ceramic board.
Package, marking and packaging specifications
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
100
80
60
40
20
Basic ordering unit (pieces)
0
0
Fig.1 Grounded emitter output
COLLECTOR-EMITTER VOLTAGE : V
Ta=25˚C
CEO
Pakaging type
Parameter
Paet No.
Marking
< -30V (I
Code
characteristics ( I )
0.7
Parameter
0.6
I
C
1.0
B
=0mA
=-1mA)
0.5
0.4
0.3
0.2
0.1
BC858BW
Symbol
V
V
V
Tstg
UMT3
P
T106
3000
CBO
CEO
EBO
I
Tj
G3K
C
C
CE
(V)
Symbol
BV
BV
BV
V
V
I
2 .0
CE(sat)
Cob
CBO
BE(on)
h
f
T
CBO
CEO
EBO
FE
−65 to +150
Limits
−0.1
BC858B
0.35
−30
−30
150
0.2
−5
SST3
T116
3000
G3K
Min.
−0.6
−30
−30
210
10.0
−5
8.0
6.0
4.0
2.0
0
0
Fig.2 Grounded emitter output
COLLECTOR-EMITTER VOLTAGE : V
Typ.
250
4.5
Unit
˚C
˚C
W
V
V
V
A
characteristics ( II )
−0.65
−0.75
−100
Max.
−0.3
480
4
1
B
=0µA
1.0
MHz
Unit
pF
nA
µA
V
V
V
V
V
V
50
45
40
35
30
25
20
15
10
5
External dimensions (Unit : mm)
BC858BW
BC858B
I
I
I
V
V
I
I
V
V
V
V
C
C
E
C
C
CE
CB
= −50µA
= −1mA
= −50µA
CB
CB
/I
/I
CE
CE
ROHM : UMT3
EIAJ : EC-70
ROHM : SST3
B
B
= −5V , I
= −10V , I
= −30V
= −30V, Ta=150 °C
/I
/I
= −10mA/−0.5mA
= −100mA/−5mA
C
C
Ta=25˚C
= −5V/−10mA
= −5V/−2mA
CE
E
=20mA , f=100MHz
(V)
E
=0 , f=1MHz
Conditions
2 .0
(1)
(1)
0.65 0.65
1.3±0.1
(3)
0.95 0.95
2.0±0.2
All terminals have same dimensions
2.9±0.2
1.9±0.2
All terminals have same dimensions
BC858BW / BC858B
(2)
(2)
(3)
0.3
0.4
+0.1
-
+0.1
−0.05
0
0.15±0.05
0.15
0.2
+0.1
−0.06
0.95
Rev.A
0.9±0.1
0.45±0.1
0.7±0.1
+0.2
−0.1
0
0.2Min.
00.1
~
0.1
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1/4

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BC858BWFT106 Summary of contents

Page 1

... Transistors PNP General Purpose Transistor BC858BW / BC858B Features < -30V ( =-1mA) CEO C 2) Complements the BC848B / BC848BW. Package, marking and packaging specifications Paet No. BC858BW Pakaging type UMT3 G3K Marking T106 Code Basic ordering unit (pieces) 3000 Absolute maximum ratings (Ta=25°C) Parameter ...

Page 2

... Transistors 500 100 10 5 0.1 1.0 10 COLLECTOR CURRENT : I Fig.3 DC current gain vs. collector current ( I ) 500 Ta=125˚C Ta=25˚C 100 Ta=-55˚ 0.1 1.0 10 COLLECTOR CURRENT : I Fig.4 DC current gain vs. collector current ( II ) 500 100 10 5 0.01 0.1 1.0 COLLECTOR CURRENT : I Fig.5 AC current gain vs. collector current Ta=25˚C V =10V 100 1000 (mA) ...

Page 3

... Transistors Ta=25˚ = 0.3 0.2 0.1 0 0.1 1.0 10 100 COLLECTOR CURRENT : I (mA) C Fig.6 Collector-emitter saturation voltage vs. collector current 1000 Ta=25˚ = 40V 15V 100 V = 1.0 10 100 COLLECTOR CURRENT : I (mA) C Fig.9 Turn-on time vs. collector current 1000 Ta=25˚C V =40V CC I =10I =10I 100 10 1 ...

Page 4

... Transistors 1000 Ta=25˚C V =5V CE 100 10 0 100 500 COLLECTOR CURRENT : I (mA) C Fig.15 Gain bandwidth product vs. collector current 100 1k FREQUENCY : f(Hz) Fig.18 Noise vs. collector curren 100k Ta=25˚C V =5V CE f=30Hz 10k 1k 100 0.01 0 COLLECTOR CURRENT : I (mA) C Fig.20 Noise characteristics ( III ) 100 Ta=25° ...

Page 5

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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