MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 29

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 14:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Consecutive READ Bursts
Notes:
COMMAND
COMMAND
COMMAND
1. Each READ command may be to either bank. DQM is LOW. Shown with BL = 4.
ADDRESS
ADDRESS
ADDRESS
CLK
CLK
CLK
DQ
DQ
DQ
T0
BANK,
T0
T0
COL n
BANK,
BANK,
COL n
COL n
READ
READ
READ
CL = 1
CL = 2
T1
T1
T1
NOP
NOP
NOP
D
OUT
n
CL = 3
T2
T2
T2
NOP
NOP
NOP
29
D
D
n + 1
OUT
OUT
n
T3
T3
T3
NOP
NOP
NOP
D
D
n + 2
D
n + 1
OUT
OUT
OUT
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TRANSITIONING DATA
T4
T4
T4
READ
BANK,
READ
BANK,
READ
BANK,
COL b
COL b
COL b
X = 0 cycles
X = 1 cycle
D
D
n + 2
D
n + 1
n + 3
OUT
OUT
OUT
128Mb: x16, x32 Mobile SDRAM
X = 2 cycles
T5
T5
T5
NOP
NOP
NOP
D
n + 2
D
D
n + 3
OUT
OUT
OUT
b
T6
T6
NOP
NOP
D
n + 3
D
OUT
OUT
b
©2001 Micron Technology, Inc. All rights reserved.
DON’T CARE
T7
NOP
D
OUT
b
READs