MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 32

IC SDRAM 128MBIT 125MHZ 54VFBGA

MT48V8M16LFB4-8:G

Manufacturer Part Number
MT48V8M16LFB4-8:G
Description
IC SDRAM 128MBIT 125MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
125MHz
Interface
Parallel
Voltage - Supply
2.3 V ~ 2.7 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Organization
8Mx16
Density
128Mb
Address Bus
14b
Access Time (max)
19/8/7ns
Maximum Clock Rate
125MHz
Operating Supply Voltage (typ)
2.5V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
100mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48V8M16LFB4-8:G
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48V8M16LFB4-8:G
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48V8M16LFB4-8:G TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
A fixed-length READ burst may be followed by, or truncated with, a PRECHARGE
command to the same bank (provided that auto precharge was not activated), and a full-
page burst may be truncated with a PRECHARGE command to the same bank. The
PRECHARGE command should be issued x cycles before the clock edge at which the last
desired data element is valid, where x = CL - 1. This is shown in Figure 18 on page 33 for
each possible CL; data element n + 3 is either the last of a burst of four or the last desired
of a longer burst. Following the PRECHARGE command, a subsequent command to the
same bank cannot be issued until
hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE
command issued at the optimum time (as described above) provides the same operation
that would result from the same fixed-length burst with auto precharge. The disadvan-
tage of the PRECHARGE command is that it requires that the command and address
buses be available at the appropriate time to issue the command; the advantage of the
PRECHARGE command is that it can be used to truncate fixed-length or full-page bursts.
32
t
RP is met. Note that part of the row precharge time is
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile SDRAM
©2001 Micron Technology, Inc. All rights reserved.
READs

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