MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 50

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13:
Table 14:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Industrial
Automotive
Junction temperature:
Commercial
Industrial
Automotive
Ambient temperature:
Commercial
Industrial
Automotive
Peak reflow temperature
G
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
54-ball
VFBGA
90-ball
VFBGA
54-pin
TSOP
4
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. All temperature specifications must be satisfied.
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots, and the values should be viewed as
3. These are estimates; actual results may vary.
4. Thermal impedance values were obtained using the 128Mb SDRAM 54-pin TSOP.
Substrate
side of the device, as shown in Figures 35, 36, and 37 on page 51.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
86.2
58.9
72.1
54.5
64.6
48.2
50
θ JA (°C/W)
Airflow =
1m/s
67.8
50.7
57.3
46.6
50.8
41.1
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
128Mb: x16, x32 Mobile SDRAM
2m/s
Min
47.6
50.6
42.8
45.3
38.1
–40
–40
–40
–40
–40
–40
62
0
0
0
–
Electrical Specifications
Max
105
110
105
260
80
90
85
95
70
85
θ JB (°C/W)
©2001 Micron Technology, Inc. All rights reserved.
46.9
41.5
36.0
35.5
37.5
32.1
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
11.3
1, 2, 3, 4
4.1
1.8
Notes
3, 5
3