MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 52

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 15:
Table 16:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Data output high voltage: Logic 1; All inputs
Data output low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Data output high voltage: Logic 1; All inputs
Data output low voltage: Logic 0; All inputs
Input leakage current:
Any input 0V ≤ V
Output leakage current: DQ are disabled; 0V ≤ V
DC Electrical Characteristics and Operating Conditions (LC Version)
Notes 1, 6 apply to entire table; notes appear on page 57; V
DC Electrical Characteristics and Operating Conditions (V Version)
Notes 1, 6 apply to entire table; notes appear on page 57; V
±0.15V
IN
IN
≤ V
≤ V
DD
DD
(All other pins not under test = 0V)
(All other pins not under test = 0V)
OUT
OUT
≤ V
≤ V
DD
DD
Q
Q
52
V
IH
Symbol
V
V
(non-DQ)
Symbol
IH
V
V
V
I
V
DD
V
OZ
(DQ)
V
V
DD
OH
I
V
OL
V
DD
V
I
IL
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OZ
DD
OH
I
OL
Q
IH
IL
I
Q
DD
DD
= +3.3V ±0.3V, V
= 2.5 ±0.2V, V
128Mb: x16, x32 Mobile SDRAM
V
DD
Min
–0.3
2.4
Min
1.65
1.25
1.25
–0.3
–5
–5
2.3
3
3
2
Q - 0.2
–
–5
–5
–
Electrical Specifications
V
DD
V
DD
V
Max
DD
3.6
3.6
0.8
0.4
Q = +2.5V ±0.2V or +1.8V
DD
DD
–
5
5
+0.55
+ 0.3
Max
Q + 0.3
2.7
2.7
0.2
©2001 Micron Technology, Inc. All rights reserved.
Q = +3.3V ±0.3V
5
5
–
+ 0.3
Units
µA
µA
V
V
V
V
V
V
Units
µA
µA
V
V
V
V
V
V
Notes
Notes
22
22
22
22