MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 60

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 39:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQML, DQMU
Power-down Mode
COMMAND
A0–A9, A11
Precharge all
BA0, BA1
active banks
Notes:
CKE
CLK
A10
DQ
1
High-Z
t CKS
t CMS
t AS
SINGLE BANK
PRECHARGE
ALL BANKS
BANK(S)
1. Violating refresh requirements during power-down may result in a loss of data.
T0
t CMH
t CKH
t AH
See Table 17 on page 53.
t CK
Two clock cycles
All banks idle, enter
power-down mode
T1
NOP
t CKS
t CL
T2
NOP
Input buffers gated off while in
power-down mode
t CH
60
Exit power-down mode
(
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
)
(
)
)
)
)
)
(
)
(
)
(
(
(
(
(
(
)
(
)
(
)
(
)
(
)
(
)
)
(
)
)
)
)
)
(
)
(
)
)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb: x16, x32 Mobile SDRAM
t CKS
Tn + 1
NOP
All banks idle
©2001 Micron Technology, Inc. All rights reserved.
Tn + 2
ACTIVE
ROW
ROW
BANK
DON’T CARE
Timing Diagrams