MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 62

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 41:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
Auto Refresh Mode
COMMAND
A0–A9, A11
BA0, BA1
Notes:
CLK
CKE
A10
DQ
Precharge all
High-Z
t CKS
active banks
t CMS
t AS
SINGLE BANK
ALL BANKS
PRECHARGE
BANK(S)
1. Each AUTO REFRESH command performs a refresh cycle. Back-to-back commands are not
2.
T0
t AH
t CKH
t CMH
required. See Table 17 on page 53.
t
commands must be applied on each positive clock edge during
t CK
RFC must not be interrupted by any executable command; COMMAND INHIBIT or NOP
t RP
T1
NOP
T2
REFRESH
AUTO
t CH
t RFC
62
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CL
Tn + 1
REFRESH
AUTO
128Mb: x16, x32 Mobile SDRAM
t RFC
NOP
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©2001 Micron Technology, Inc. All rights reserved.
RFC.
To + 1
ACTIVE
ROW
ROW
BANK
Timing Diagrams
DON’T CARE