MT48V8M16LFB4-8:G Micron Technology Inc, MT48V8M16LFB4-8:G Datasheet - Page 71

• Manufacturer Part Number: MT48V8M16LFB4-8:G
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48V8M16LFB4-8:G

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 19/8/7ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Supply Current: 100mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 50:
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
DQMU, DQML
COMMAND
A0–A9, A11
BA0, BA1
CKE
CLK
A10
DQ
t CKS
t CMS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
Write – Without Auto Precharge
BANK
t CKH
t CMH
t AH
t AH
t AH
t CK
Notes:
t RCD
t RAS
t RC
T1
NOP
1. For this example, BL = 4, and the WRITE burst is followed by a “manual” PRECHARGE.
2. 15ns is required between <D
3. x16: A9 and A11 = “Don’t Care.”
DISABLE AUTO PRECHARGE
quency.
x32: A8, A9, and A11 = “Don’t Care.”
See Table 17 on page 53.
t CMS
t CL
t DS
COLUMN m 3
WRITE
T2
BANK
D
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
T4
IN
NOP
m + 2
t DH
71
IN
m + 3> and the PRECHARGE command regardless of fre-
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
128Mb: x16, x32 Mobile SDRAM
NOP
T6
2
SINGLE BANK
PRECHARGE
ALL BANKS
BANK
T7
©2001 Micron Technology, Inc. All rights reserved.
UNDEFINED
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
BANK
ROW
T9
DON’T CARE