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MT48V8M16LFB4-8:G TR
MT48V8M16LFB4-8:G TR | |
|---|---|
| Manufacturer Part Number | MT48V8M16LFB4-8:G TR |
| Description | IC SDRAM 128MBIT 125MHZ 54VFBGA |
| Manufacturer | Micron Technology Inc |
| MT48V8M16LFB4-8:G TR datasheets |
|
Availability: By request
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Warranty: 60 days
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Specifications of MT48V8M16LFB4-8:G TR | |||
|---|---|---|---|
| Format - Memory | RAM | Memory Type | Mobile SDRAM |
| Memory Size | 128M (8Mx16) | Speed | 125MHz |
| Interface | Parallel | Voltage - Supply | 2.3 V ~ 2.7 V |
| Operating Temperature | 0°C ~ 70°C | Package / Case | 54-VFBGA |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | ||
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Table 17:
Electrical Characteristics and Recommended AC Operating Conditions
Notes 5, 6, 7, 8, 9, 11 apply to entire table; notes appear on page 57
Ac Characteristics
Parameter
Access time from CLK (positive
edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period (4,096 rows)
Refresh period – (AT) (4,096 rows)
AUTO REFRESH command period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Auto precharge mode (a)
Manual precharge mode (m)
Exit SELF REFRESH to ACTIVE command
PDF: 09005aef807f4885/Source: 09005aef8071a76b
128Mbx16x32Mobile_2.fm - Rev. M 1/09 EN
-75M
Symbol
Min
Max
t
CL = 3
AC (3)
–
5.4
t
CL = 2
AC (2)
–
6
t
CL = 1
AC (1)
–
na
t
AH
0.8
–
t
AS
1.5
–
t
CH
3
–
t
CL
2.5
–
t
CL = 3
CK (3)
7.5
–
t
CL = 2
CK (2)
9.6
–
t
CL = 1
CK (1)
n/a
–
t
CKH
1
–
t
CKS
2.5
–
t
CMH
0.8
–
t
CMS
1.5
–
t
DH
0.8
–
t
DS
1.5
–
t
CL = 3
HZ (3)
–
5.4
t
CL = 2
HZ (2)
–
6
t
CL = 1
HZ (1)
–
na
t
LZ
1
–
t
OH
2.5
–
t
OH
1.8
–
N
t
RAS
44
120,000
t
RC
66
–
t
RCD
19
–
t
REF
–
64
t
REF
–
16
AT
t
RFC
66
–
t
RP
19
–
t
RRD
2
–
t
T
0.3
1.2
t
WR (a)
1 CLK
–
+7.5ns
t
WR (m)
15
–
t
XSR
67
–
Micron Technology, Inc., reserves the right to change products or specifications without notice.
53
128Mb: x16, x32 Mobile SDRAM
Electrical Specifications
-8
-10
Min
Max
Min
Max
Units
–
7
–
7
–
8
–
8
–
19
–
22
1
–
1
–
2.5
–
2.5
–
3
–
3
–
3
–
3
–
8
–
10
–
9.6
–
12
–
20
–
25
–
1
–
1
–
2.5
–
2.5
–
1
–
1
–
2.5
–
2.5
–
1
–
1
–
2.5
–
2.5
–
–
7
–
7
–
8
–
8
–
19
–
22
1
–
1
–
2.5
–
2.5
–
1.8
–
1.8
–
48
120,000
50
120,000
80
–
100
–
20
–
20
–
–
64
–
64
–
16
–
16
80
–
100
–
20
–
20
–
2
–
2
–
0.5
1.2
0.5
1.2
1 CLK
–
1 CLK
–
+7ns
+5ns
15
–
15
–
80
–
100
–
©2001 Micron Technology, Inc. All rights reserved.
Notes
ns
ns
ns
ns
ns
ns
ns
ns
23
ns
23
ns
23
ns
ns
ns
ns
ns
ns
ns
10
ns
10
ns
10
ns
ns
27
ns
ns
ns
ns
ms
ms
ns
ns
t
CK
ns
7
–
24
ns
25
ns
20
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