BC548B_D11Z Fairchild Semiconductor, BC548B_D11Z Datasheet
BC548B_D11Z
Manufacturer Part Number
BC548B_D11Z
Description
Transistors Bipolar - BJT NPN 30V 100mA HFE/450
Manufacturer
Fairchild Semiconductor
Datasheet
1.BC548B_D11Z.pdf
(4 pages)
Specifications of BC548B_D11Z
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Gain Bandwidth Product Ft
300 MHz
Dc Collector/base Gain Hfe Min
200 at 2 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Maximum Power Dissipation
500 mW
Minimum Operating Temperature
- 65 C
©2002 Fairchild Semiconductor Corporation
Switching and Applications
• High Voltage: BC546, V
• Low Noise: BC549, BC550
• Complement to BC556 ... BC560
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
h
V
V
V
I
P
T
T
I
h
V
V
V
f
C
C
NF
C
Symbol
CBO
T
FE
FE
J
STG
CBO
CEO
EBO
C
CE
BE
BE
ob
ib
Symbol
(sat)
(on)
(sat)
Classification
Classification
h
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Noise Figure
FE
Collector-Base Voltage
Collector-Emitter Voltage : BC546
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
CEO
Parameter
: BC549/550
: BC549
: BC550
=65V
: BC546/547/548
BC546/547/548/549/550
110 ~ 220
T
a
=25 C unless otherwise noted
A
T
: BC546
: BC547/550
: BC548/549
: BC547/550
: BC548/549
: BC548/549/550
: BC546/547
Parameter
a
=25 C unless otherwise noted
V
V
I
I
I
I
V
V
V
V
V
V
f=1KHz, R
V
R
C
C
C
C
CB
CE
CE
CE
CE
CB
EB
CE
CE
G
=10mA, I
=100mA, I
=10mA, I
=100mA, I
=2K , f=30~15000MHz
=30V, I
=5V, I
=5V, I
=5V, I
=5V, I
=10V, I
=0.5V, I
=5V, I
=5V, I
Test Condition
C
C
C
C
C
C
G
E
=2mA
B
B
=2mA
=10mA
=10mA, f=100MHz
E
=200 A
=200 A
C
=2K
=0
=0.5mA
B
=0.5mA
B
=0, f=1MHz
=0, f=1MHz
=5mA
=5mA
200 ~ 450
B
1. Collector 2. Base 3. Emitter
1
Min.
580
110
-65 ~ 150
Value
100
500
150
80
50
30
65
45
30
6
5
Typ.
200
700
900
660
300
3.5
1.2
1.4
1.4
90
9
2
TO-92
420 ~ 800
Max.
C
800
250
600
700
720
15
10
6
4
4
3
Rev. A2, August 2002
Units
mW
mA
V
V
V
V
V
V
V
V
C
C
Units
MHz
mV
mV
mV
mV
mV
mV
nA
dB
dB
dB
dB
pF
pF
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BC548B_D11Z Summary of contents
Page 1
... Current Gain Bandwidth Product T C Output Capacitance ob C Input Capacitance ib NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 h Classification FE Classification h FE ©2002 Fairchild Semiconductor Corporation BC546/547/548/549/550 T =25 C unless otherwise noted a Parameter : BC546 : BC547/550 : BC548/549 : BC547/550 : BC548/549 : BC546/547 : BC548/549/550 T =25 C unless otherwise noted a Test Condition V =30V ...
Page 2
... Figure 1. Static Characteristic 1000 100 [mA], COLLECTOR CURRENT C Figure 3. DC current Gain 100 [V], COLLECTOR-BASE VOLTAGE CB Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 250 200 150 100 0.1 0 ...
Page 3
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A2, August 2002 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...