TIP31TU Fairchild Semiconductor, TIP31TU Datasheet - Page 2

• Manufacturer Part Number: TIP31TU
• Description: Transistors Bipolar - BJT
• Manufacturer: Fairchild Semiconductor

Specifications of TIP31TU

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 3 MHz
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Maximum Power Dissipation: 2000 mW
• Minimum Operating Temperature: - 65 C

TIP31/TIP31A/TIP31B/TIP31C Rev. A
© 2008 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: PW≤300ms, Duty Cycle≤2%
V
I
I
I
h
V
V
f
CEO
EBO
CES
T
FE
CEO
CE
BE
Symbol
(sat)
(sat)
(sus)
* Collector-Emitter Sustaining Voltage
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Current Gain Bandwidth Product
Parameter
: TIP31/31A
: TIP31B/31C
T
C
: TIP31
: TIP31A
: TIP31B
: TIP31C
: TIP31
: TIP31A
: TIP31B
: TIP31C
=25°C unless otherwise noted
2
I
V
V
V
V
V
V
V
V
V
I
V
V
C
C
CE
CE
CE
CE
CE
CE
EB
CE
CE
CE
CE
= 30mA, I
= 3A, I
= 30V, I
= 60V, I
= 40V, V
= 60V, V
= 80V, V
= 100V, V
= 5V, I
= 4V, I
= 4V, I
= 4V, I
= 10V, I
B
Test Condition
= 375mA
C
C
C
C
B
B
B
C
= 0
= 1A
= 3A
= 3A
EB
EB
EB
= 0
= 0
= 0
= 500mA, f = 1MHz
EB
= 0
= 0
= 0
= 0
Min.
100
3.0
40
60
80
25
10
Max.
200
200
200
200
0.3
0.3
1.2
1.8
50
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1
Units
MHz
mA
mA
mA
μA
μA
μA
μA
V
V
V
V
V
V