TIP31TU Fairchild Semiconductor, TIP31TU Datasheet - Page 3

• Manufacturer Part Number: TIP31TU
• Description: Transistors Bipolar - BJT
• Manufacturer: Fairchild Semiconductor

Specifications of TIP31TU

• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 40 V
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 3 A
• Gain Bandwidth Product Ft: 3 MHz
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Maximum Power Dissipation: 2000 mW
• Minimum Operating Temperature: - 65 C

TIP31/TIP31A/TIP31B/TIP31C Rev. A
© 2008 Fairchild Semiconductor Corporation
Typical Characteristics
1000
0.1
100
10
10
1
1
1
I
I
C
C
(MAX) (PULSE)
(MAX) (DC)
Figure 3. Safe Operating Area
V
CE
Figure 1. DC current Gain
TIP31A V
TIP31B V
TIP31C V
TIP31 V
[V], COLLECTOR-EMITTER VOLTAGE
10
I
C
10
[mA], COLLECTOR CURRENT
CEO
CEO
CEO
CEO
MAX.
MAX.
MAX.
MAX.
100
100
100
μ
1000
s
V
CE
= 4V
10000
3
Figure 2. Base-Emitter Saturation Voltage
10000
1000
50
45
40
35
30
25
20
15
10
100
5
0
10
Collector-Emitter Saturation Voltage
0
1
25
Figure 4. Power Derating
V
V
BE
CE
I
50
C
(sat)
(sat)
10
[mA], COLLECTOR CURRENT
T
C
[
o
C], CASE TEMPERATURE
75
100
100
125
150
1000
I
175
C
/I
www.fairchildsemi.com
B
= 10
200
10000