PESD5V0L2UM T/R NXP Semiconductors, PESD5V0L2UM T/R Datasheet

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PESD5V0L2UM T/R

Manufacturer Part Number
PESD5V0L2UM T/R
Description
TVS Diode Arrays 5V DUAL ESD PROTECT
Manufacturer
NXP Semiconductors
Series
PESDxL2UMr
Datasheet

Specifications of PESD5V0L2UM T/R

Product Category
TVS Diode Arrays
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
6.8 V
Clamping Voltage
15 V
Operating Voltage
5 V
Peak Surge Current
2.5 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Capacitance
19 pF
Dimensions
0.62 (Max) mm W x 1.02 (Max) mm L
Package / Case
SOT-883
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
10000
Part # Aliases
PESD5V0L2UM,315
Product data sheet
Supersedes data of 2003 Aug 05
DATA SHEET
PESDxL2UM series
Low capacitance double ESD
protection diode
BOTTOM VIEW
DISCRETE SEMICONDUCTORS
M3D883
2005 May 23

Related parts for PESD5V0L2UM T/R

PESD5V0L2UM T/R Summary of contents

Page 1

DATA SHEET BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product data sheet Supersedes data of 2003 Aug 05 DISCRETE SEMICONDUCTORS M3D883 2005 May 23 ...

Page 2

... NXP Semiconductors Low capacitance double ESD protection diode FEATURES • Uni-directional ESD protection of two lines or bi-directional ESD protection of one line • Reverse standoff voltage 3.3 and 5 V • Low diode capacitance • Ultra low leakage current • Leadless ultra small SOT883 surface mount package (1 × ...

Page 3

... NXP Semiconductors Low capacitance double ESD protection diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode I peak pulse current pp PESD3V3L2UM PESD5V0L2UM P peak pulse power pp I non-repetitive peak forward current FSM I non-repetitive peak reverse current ...

Page 4

... NXP Semiconductors Low capacitance double ESD protection diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F V reverse stand-off voltage RWM PESD3V3L2UM PESD5V0L2UM I reverse leakage current RM PESD3V3L2UM PESD5V0L2UM V clamping voltage (CL)R PESD3V3L2UM PESD5V0L2UM V breakdown voltage BR PESD3V3L2UM PESD5V0L2UM ...

Page 5

... NXP Semiconductors Low capacitance double ESD protection diode 10 handbook, halfpage I ZSM (A) 1 PESD5V0L2UM −1 10 −2 − Fig.2 Non-repetitive peak reverse current as a function of pulse time (square pulse handbook, halfpage P ZSM (W) PESD3V3L2UM 10 PESD5V0L2UM 1 −2 − ZSM ZSM ...

Page 6

... NXP Semiconductors Low capacitance double ESD protection diode handbook, full pagewidth ESD TESTER Note 1: IEC 61000-4-2 network 150 pF 330 Ω GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) ...

Page 7

... NXP Semiconductors Low capacitance double ESD protection diode PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE VERSION IEC SOT883 2005 May 23 ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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