TGL41-24A/75 Vishay Semiconductors, TGL41-24A/75 Datasheet - Page 3

• Manufacturer Part Number: TGL41-24A/75
• Description: TVS Diodes - Transient Voltage Suppressors 400W 24V Unidirect
• Manufacturer: Vishay Semiconductors

Specifications of TGL41-24A/75

• Product Category: TVS Diodes - Transient Voltage Suppressors
• Polarity: Unidirectional
• Operating Voltage: 20.5 V
• Breakdown Voltage: 22.8 V
• Clamping Voltage: 33.2 V
• Peak Surge Current: 40 A
• Package / Case: DO-213AB
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Dimensions: 2.67 (Max) mm W x 5.2 (Max) mm L
• Peak Pulse Power Dissipation: 400 W
• Factory Pack Quantity: 1500
• Tradename: TRANSZORB

RATINGS AND CHARACTERISTICS CURVES (T
Revision: 11-Dec-12
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
100
100
0.1
10
150
100
75
50
25
0.1 µs
50
1
0
0
Fig. 1 - Peak Pulse Power Rating Curve
0
0
TGL41-100
www.vishay.com
25
1.0 µs
t
d
Fig. 3 - Pulse Waveform
t
Peak Value
I
Half Value -
I
r
PPM
PPM
= 10 µs
T
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
50
1.0
J
- Initial Temerature (°C)
TGL200A
t
d
10 µs
75
- Pulse Width
t - Time (ms)
I
PP
2
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
100
2.0
A
100 µs
= 25 °C
TGL41-6.8
T
Pulse Width (t
is defined as the Point
where the Peak Current
decays to 50 % of I
10/1000 µs Waveform
as defined by R.E.A.
J
= 25 °C
125
150
1.0 ms
3.0
TGL91A
d
)
175
PPM
10 ms
200
4.0
A
= 25 °C unless otherwise noted)
3
Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current
10 000
TGL41-6.8A thru TGL41-200A
1000
0.75
0.50
1.00
0.25
100
10
50
40
30
20
10
0
0
1
0
1
www.vishay.com/doc?91000
Vishay General Semiconductor
Measured at Stand-Off
Voltage V
T
f = 1.0 MHz
V
J
sig
= 25 °C
Fig. 4 - Typical Junction Capacitance
25
= 50 mV
Fig. 5 - Power Derating Curve
V
Number of Cycles at 60 Hz
BR
T
WM
50
L
Uni-Directional Only
p-p
- Breakdown Voltage (V)
- Lead Temerature (°C)
10
75
T
8.3 ms Single Half Sine-Wave
J
= T
100
[e-mail]
10
J
Max.
125
Measured at
Zero Bias
100
Document Number: 88403
Uni-Directional
150
175
1000
200
100