IDT6116LA20SOGI8 IDT, Integrated Device Technology Inc, IDT6116LA20SOGI8 Datasheet

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IDT6116LA20SOGI8

Manufacturer Part Number
IDT6116LA20SOGI8
Description
IC SRAM 16KBIT 20NS 24SOIC
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT6116LA20SOGI8

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16K (2K x 8)
Speed
20ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
6116LA20SOGI8
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Features
Functional Block Diagram
©2006 Integrated Device Technology, Inc.
I/O
I/O
A
A
WE
CS
OE
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
Military product compliant to MIL-STD-833, Class B
10
0
0
7
CONTROL
CIRCUIT
DECODER
ADDRESS
CIRCUIT
INPUT
DATA
CMOS Static RAM
16K (2K x 8-Bit)
1
Description
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
Access times as fast as 15ns are available. The circuit also offers a
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
Military grade product is manufactured in compliance to the latest
I/O CONTROL
128 X 128
MEMORY
ARRAY
JANUARY 2009
IDT6116SA
IDT6116LA
DSC-3089/06
3089 drw 01
V
GND
CC
,

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IDT6116LA20SOGI8 Summary of contents

Page 1

... Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. ADDRESS INPUT DATA CIRCUIT 1 IDT6116SA IDT6116LA 128 X 128 MEMORY ARRAY I/O CONTROL JANUARY 2009 V CC GND , 3089 drw 01 DSC-3089/06 ...

Page 2

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Pin Configurations P24 P24 D24 D24 SO24 SO24-4 ...

Page 3

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Recommended Operating Temperature and Supply Voltage Ambient Grade Temperature O O Military - +125 Industrial - +85 C Commercial +70 O ...

Page 4

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) DC Electrical Characteristics (V = 5.0V ± 10 0.2V Symbol Parameter Power I Operating Power Supply CC1 SA Current, CS < Outputs Open LA ...

Page 5

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Low V Data Retention Waveform 4.5V t CDR Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test ...

Page 6

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) Chip Select to Output in Low-Z t CLZ ...

Page 7

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT Supply Currents I SB Timing Waveform of Read Cycle No. 2 ADDRESS DATA PREVIOUS DATA VALID ...

Page 8

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write Pulse ...

Page 9

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA PREVIOUS DATA VALID OUT DATA IN Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ...

Page 10

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Ordering Information — Military 6116 XX XXX Device Type Power Speed Ordering Information — Commercial & Industrial 6116 XX XXX Device Type Power Speed Military, Commercial, and Industrial Temperature Ranges X X ...

Page 11

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Datasheet Document History 1/7/ Pg. 11 08/09/00 02/01/01 12/30/03 Pg. 3,10 03/31/05 Pg. 10 11/15/06 Pg. 3 Pg.4 CORPORATE HEADQUARTERS 6024 Silver Creek Valley ...

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