- Components/
- Integrated Circuits (ICs)/
- Memory/
IDT71V67703S80BG8
IDT71V67703S80BG8 | |
|---|---|
| Manufacturer Part Number | IDT71V67703S80BG8 |
| Description | IC SRAM 9MBIT 80NS 119BGA |
| Manufacturer | IDT, Integrated Device Technology Inc |
| IDT71V67703S80BG8 datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
Specifications of IDT71V67703S80BG8 | |||
|---|---|---|---|
| Format - Memory | RAM | Memory Type | SRAM - Synchronous |
| Memory Size | 9M (256K x 36) | Speed | 80ns |
| Interface | Parallel | Voltage - Supply | 3.135 V ~ 3.465 V |
| Operating Temperature | 0°C ~ 70°C | Package / Case | 119-BGA |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | Other names | 71V67703S80BG8 |
PrevNext
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect
Symbol
Rating
(2)
V
Terminal Voltage with
TERM
Respect to GND
(3,6)
V
Terminal Voltage with
TERM
Respect to GND
(4,6)
V
Terminal Voltage with
TERM
Respect to GND
(5,6)
V
Terminal Voltage with
TERM
Respect to GND
(7)
T
A
Operating Temperature
T
Temperature
BIAS
Under Bias
Storage
T
STG
Temperature
P
Power Dissipation
T
I
DC Output Current
OUT
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V
terminals only.
DD
3. V
terminals only.
DDQ
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V
DDQ
7. T
is the "instant on" case temperature.
A
(1)
Symbol
Parameter
C
Input Capacitance
IN
C
I/O Capacitance
V
I/O
(1)
Symbol
Parameter
C
Input Capacitance
IN
C
I/O Capacitance
V
I/O
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Commercial
Unit
Grade
-0.5 to +4.6
V
Commercial
-0.5 to V
V
DD
Industrial
-0.5 to V
+0.5
V
DD
NOTE:
1. T
is the "instant on" case temperature.
A
-0.5 to V
+0.5
V
DDQ
-0 to +70
o
C
Symbol
o
-55 to +125
C
V
DD
V
DDQ
-55 to +125
o
C
V
SS
2.0
W
V
IH
50
mA
V
IH
5309 tbl 03
V
IL
NOTE:
1. V
(min) = -1.0V for pulse width less than t
IL
during power supply ramp up.
Symbol
Conditions
Max.
Unit
C
V
= 3dV
5
pF
IN
IN
C
= 3dV
7
pF
I/O
OUT
5309 tbl 07
Conditions
Max.
Unit
V
= 3dV
7
pF
IN
= 3dV
7
pF
OUT
5309 tbl 07a
6.42
4
Commercial and Industrial Temperature Ranges
Temperature
(1)
V
V
SS
DD
0°C to +70°C
0V
3.3V±5%
-40°C to +85°C
0V
3.3V±5%
Parameter
Min.
Typ.
Core Supply Voltage
3.135
3.3
I/O Supply Voltage
3.135
3.3
Supply Voltage
0
0
Input High Voltage - Inputs
2.0
____
Input High Voltage - I/O
2.0
____
(1)
____
Input Low Voltage
-0.3
, once per cycle.
CYC/2
(1)
Parameter
Conditions
Input Capacitance
V
= 3dV
IN
I/O Capacitance
V
= 3dV
OUT
V
DDQ
3.3V±5%
3.3V±5%
5309 tbl 04
Max.
Unit
3.465
V
3.465
V
0
V
V
+0.3
V
DD
V
+0.3
V
DDQ
0.8
V
5309 tbl 05
Max.
Unit
7
pF
7
pF
5309 tbl 07b
Related parts for IDT71V67703S80BG8 | |||
|---|---|---|---|
| Part Number | Description | Manufacturer | Datasheet |
 IDT71V67703S80PF |
IC SRAM 9MBIT 80NS 100TQFP | IDT, Integrated Device Technology Inc |
|
 IDT71V67703S75PFG8 |
IC SRAM 9MBIT 75NS 100TQFP | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S80PFG8 |
IC SRAM 9MBIT 80NS 100TQFP | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S85PFG8 |
IC SRAM 9MBIT 85NS 100TQFP | IDT, Integrated Device Technology Inc |
|
 IDT71V67703S75BQ8 |
IC SRAM 9MBIT 75NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S75BQG8 |
IC SRAM 9MBIT 75NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S80BQ8 |
IC SRAM 9MBIT 80NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S80BQG8 |
IC SRAM 9MBIT 80NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S85BQ8 |
IC SRAM 9MBIT 85NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S85BQG8 |
IC SRAM 9MBIT 85NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S75BG8 |
IC SRAM 9MBIT 75NS 119BGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S85BG8 |
IC SRAM 9MBIT 85NS 119BGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S75BQGI8 |
IC SRAM 9MBIT 75NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S80BQGI8 |
IC SRAM 9MBIT 80NS 165FBGA | IDT, Integrated Device Technology Inc |
|
|
IDT71V67703S80BQI8 |
IC SRAM 9MBIT 80NS 165FBGA | IDT, Integrated Device Technology Inc |
|
