CY7C09349A-12AC Cypress Semiconductor Corp, CY7C09349A-12AC Datasheet

IC SRAM 72KBIT 12NS 100LQFP

CY7C09349A-12AC

Manufacturer Part Number
CY7C09349A-12AC
Description
IC SRAM 72KBIT 12NS 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C09349A-12AC

Format - Memory
RAM
Memory Type
SRAM - Dual Port, Synchronous
Memory Size
72K (4K x 18)
Speed
12ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1446

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C09349A-12AC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Cypress Semiconductor Corporation
Document #: 38-06048 Rev. **
Features
Notes:
1.
2.
Logic Block Diagram
• True dual-ported memory cells which allow simulta-
• Two Flow-Through/Pipelined devices
• Three Modes
• Pipelined output mode on both ports allows fast
• 0.35-micron CMOS for optimum speed/power
• High-speed clock to data access 6.5
v
R/W
UB
CE
CE
LB
OE
FT/Pipe
I/O
I/O
A
CLK
ADS
CNTEN
CNTRST
neous access of the same memory location
100-MHz cycle time
(max.)
— 4K x 18 organization (CY7C09349A)
— 8K x 18 organization (CY7C09359A)
— Flow-Through
— Pipelined
— Burst
0L
See page 6 for Load Conditions.
A
L
L
0L
1L
9L
0L
0
L
–A
–A
L
L
L
–I/O
–I/O
11
11/12L
[2]
L
L
for 4K; A
L
17L
8L
0
–A
12/13
12
for 8K devices.
For the most recent information, visit the Cypress web site at www.cypress.com
9
9
0/1
0/1
1
0
1b
Counter/
Address
Register
Decode
b
0b 1a 0a
a
[1]
/7.5/9/12 ns
3901 North First Street
Control
I/O
True Dual-Ported
Synchronous Dual-Port Static RAM
RAM Array
• Low operating power
• Fully synchronous interface for easier operation
• Burst counters increment addresses internally
• Dual Chip Enables for easy depth expansion
• Upper and lower byte controls for bus matching
• Automatic power-down
• Commercial and Industrial temperature ranges
• Available in 100-pin TQFP
— Active = 200 mA (typical)
— Standby = 0.05 mA (typical)
— Shorten cycle times
— Minimize bus noise
— Supported in Flow-Through and Pipelined modes
Control
I/O
San Jose
0a
a
1a
Counter/
Register
Address
Decode
0b
b
CA 95134
1b
0/1
1
0
0/1
Revised September 19, 2001
9
9
CY7C09349A
CY7C09359A
4K/8K x 18
12/13
408-943-2600
I/O
A
I/O
0R
CNTRST
9R
FT/Pipe
CNTEN
0R
–A
[2]
–I/O
–I/O
ADS
11/12R
R/W
CLK
CE
CE
UB
OE
LB
17R
0R
1R
8R
R
R
R
R
R
R
R
R
R

Related parts for CY7C09349A-12AC

CY7C09349A-12AC Summary of contents

Page 1

... Features • True dual-ported memory cells which allow simulta- neous access of the same memory location • Two Flow-Through/Pipelined devices — organization (CY7C09349A) — organization (CY7C09359A) • Three Modes — Flow-Through — Pipelined — Burst • Pipelined output mode on both ports allows fast 100-MHz cycle time • ...

Page 2

... Functional Description The CY7C09349A and CY7C09359A are high-speed synchro- nous CMOS 4K and dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory. control, address, and data lines allow for minimal set-up and hold times. In pipelined output mode, data is registered for decreased cycle time ...

Page 3

... Max. Access Time (ns) (Clock to Data, Pipelined) Typical Operating Current I (mA) CC Typical Standby Current for I (mA) SB1 (Both Ports TTL Level) Typical Standby Current for I (mA) SB3 (Both Ports CMOS Level) Note: 4. This pin is NC for CY7C09349A. Document #: 38-06048 Rev. ** 100-Pin TQFP (Top View CY7C09359A (8K x 18) ...

Page 4

... I/O –I/O for x16) of the memory array. For read operations both Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage ........................................... >2001V Latch-Up Current..................................................... >200 mA Operating Range Range Commercial [5] Industrial CY7C09349A CY7C09359A AND CE must be asserted MAX –I/O ). 8/9L 15/17L Ambient Temperature V ...

Page 5

... Com’l. 0.05 0.5 0.05 [5] Ind. Com’l. 160 200 145 [5] Ind. Description Test Conditions MHz 5.0V CC AND CE 0 CY7C09349A CY7C09359A CY7C09349A CY7C09359A -9 2.4 2.4 0.4 0.4 2.2 2.2 0.8 0.8 10 –10 10 –10 420 215 360 195 240 410 105 35 95 ...

Page 6

... Note: 7. Test Conditions pF. Document #: 38-06048 Rev 250 TH OUTPUT (b) Thévenin Equivalent (Load 1) [7] 3.0V GND = 1. Capacitance (pF) (b) Load Derating Curve CY7C09349A CY7C09359A 5V OUTPUT 1.4V TH (c) Three-State Delay (Load 2) (Used for CKLZ OLZ including scope and jig) ALL INPUT PULSES 90% 90% 10% 10 ...

Page 7

... Clock to Clock Set-up Time CCS Note: 8. Test conditions used are Load 2. Document #: 38-06048 Rev. ** CY7C09349A CY7C09359A [ Min. Max. Min. Max. Min 100 6.5 7.5 12 6 6.5 7 CY7C09349A CY7C09359A -12 Max. Min. Max. Unit 40 33 MHz 67 50 MHz Page ...

Page 8

... CD1 Q n [9, 10, 11, 12 CYC2 t CL2 A A n+1 t CD2 Q t CKLZ = following the next rising edge of the clock constantly loads the address on the rising edge of the CLK. Numbers are for reference only. IL CY7C09349A CY7C09359A n+2 n+3 t CKHZ Q Q n+1 n OHZ OLZ ...

Page 9

... CL2 CD2 HC CD2 [15, 16, 17, 18 MATCH CD1 CWDD , R/W, CNTEN, and CNTRST = for the left port, which is being written to. IH CY7C09349A CY7C09359A CD2 CKHZ CKLZ CD2 CKHZ CKLZ NO NO MATCH t CD1 VALID >maximum specified, then data is not valid CWDD CCS CKHZ A 5 ...

Page 10

... During “No operation,” data in memory at the selected address may be corrupted and should be rewritten to ensure data integrity. Document #: 38-06048 Rev. ** [12, 19, 20, 21 n+1 n CD2 CKHZ Q n READ NO OPERATION [12, 19, 20, 21 n+1 n+2 n n+2 n+3 t CD2 OHZ READ WRITE . IH CY7C09349A CY7C09359A A A n+3 n CKLZ WRITE READ A A n+4 n CKLZ CD2 READ Page CD2 Q n+3 Q n+4 ...

Page 11

... OUT OE Document #: 38-06048 Rev. ** [10, 12, 19, 20 n+1 n CD1 CKHZ NO READ OPERATION [10, 12, 19, 20 n OHZ READ CY7C09349A CY7C09359A n+2 n n+2 t CD1 Q n CKLZ DC WRITE READ A A n+3 n CD1 CKLZ DC WRITE READ A n+4 t CD1 A n+5 t CD1 n+4 Page ...

Page 12

... R/W and CNTRST = Document #: 38-06048 Rev. ** [22] t SAD t SCN t CD2 READ WITH COUNTER [22 n+1 READ WITH COUNTER . IH CY7C09349A CY7C09359A t HAD t HCN Q n+1 n+2 COUNTER HOLD READ WITH COUNTER t t SAD HAD t t SCN HCN Q n+2 READ COUNTER HOLD WITH COUNTER Q n+3 Q ...

Page 13

... The “Internal Address” is equal to the “External Address” when ADS = V Document #: 38-06048 Rev n n+1 n+1 WRITE WITH WRITE COUNTER COUNTER HOLD . IH and equals the counter output when ADS = V IL CY7C09349A CY7C09359A [23, 24 n+2 n n+2 n+3 n+4 WRITE WITH COUNTER . IH A n+4 ...

Page 14

... SD DATA IN DATA OUT COUNTER RESET Notes: 25 UB, and 26. No dead cycle exists during counter reset. A READ or WRITE cycle may be coincidental with the counter reset. Document #: 38-06048 Rev. ** [12, 19, 25, 26 WRITE READ ADDRESS 0 ADDRESS 0 CY7C09349A CY7C09359A n READ READ ADDRESS 1 ADDRESS n Page n ...

Page 15

... CNTRST I/O Mode Reset out( out( out( Increment out(n+ CY7C09349A CY7C09359A Operation 17 [30] Deselected [30] Deselected Write IN [30] Read Outputs Disabled Operation Counter Reset to Address 0 Load Address Load into Counter Hold External Address Blocked—Counter Disabled Counter Enabled—Internal Address Generation Page ...

Page 16

... Ordering Information 4K x18 Synchronous Dual-Port SRAM Speed (ns) Ordering Code [1] 6.5 CY7C09349A-6AC 7.5 CY7C09349A-7AC 9 CY7C09349A-9AC 12 CY7C09349A-12AC 8K x18 Synchronous Dual-Port SRAM Speed (ns) Ordering Code [1] 6.5 CY7C09359A-6AC 7.5 CY7C09359A-7AC 9 CY7C09359A-9AC CY7C09359A-9AI 12 CY7C09359A-12AC Package Diagram 100-Pin Thin Plastic Quad Flat Pack (TQFP) A100 Document #: 38-06048 Rev. ** © ...

Page 17

... Document Title: CY7C09349A/CY7C09359A 4K/ Synchronous Dual-Port Static RAM Document Number: 38-06048 Issue REV. ECN NO. Date ** 110200 09/29/01 Document #: 38-06048 Rev. ** Orig. of Change Description of Change SZV Change from Spec number: 38-00834 to 38-06048 CY7C09349A CY7C09359A Page ...

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