IC SRAM 18MBIT 85NS 100TQFP

 

IDT71T75702S85PFI8

Manufacturer Part NumberIDT71T75702S85PFI8
DescriptionIC SRAM 18MBIT 85NS 100TQFP
ManufacturerIDT, Integrated Device Technology Inc
IDT71T75702S85PFI8 datasheets

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Specifications of IDT71T75702S85PFI8

Format - MemoryRAMMemory TypeSRAM - Synchronous ZBT
Memory Size18M (512K x 36)Speed85ns
InterfaceParallelVoltage - Supply2.375 V ~ 2.625 V
Operating Temperature-40°C ~ 85°CPackage / Case100-TQFP, 100-VQFP
Lead Free Status / RoHS StatusContains lead / RoHS non-compliantOther names71T75702S85PFI8
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512K x 36, 1M x 18 memory configurations
Supports high performance system speed - 100 MHz
(7.5 ns Clock-to-Data Access)
TM
ZBT
Feature - No dead cycles between write and read cycles
Internally synchronized output buffer enable eliminates the
need to control OE
OE
OE
OE
OE
Single R/W W W W W (READ/WRITE) control pin
4-word burst capability (Interleaved or linear)
BW
BW
BW
BW
BW
BW
BW
- BW
BW
Individual byte write (BW
) control (May tie active)
1
4
Three chip enables for simple depth expansion
2.5V power supply (±5%)
2.5V (±5%) I/O Supply (V
)
DDQ
Power down controlled by ZZ input
Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA)
The IDT71T75702/902 are 2.5V high-speed 18,874,368-bit
(18 Megabit) synchronous SRAMs organized as 512K x 36 /1M x 18.
They are designed to eliminate dead bus cycles when turning the bus
around between reads and writes, or writes and reads. Thus they have
TM
been given the name ZBT
, or Zero Bus Turnaround.
Address and control signals are applied to the SRAM during one clock
cycle, and on the next clock cycle the associated data cycle occurs, be
it read or write.
A
-A
Address Inputs
0
19
Chip Enables
, CE
,
1
2
2
Output Enable
R/
Read/Write Signal
Clock Enable
Individual Byte Write Selects
,
,
,
1
2
3
4
CLK
Clock
ADV/
Advance Burst Address/Load New Address
Linear/Interleaved Burst Order
TMS
Test Mode Select
TDI
Test Data Input
TCK
Test Clock
TDO
Test Data Output
JTAG Reset (Optional)
ZZ
Sleep Mode
I/O
-I/O
, I/O
-I/O
Data Input/Output
0
31
P1
P4
V
, V
Core Power, I/O Power
DD
DDQ
V
Ground
SS
©2004 Integrated Device Technology, Inc.
512K x 36, 1M x 18
2.5V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Flow-Through Outputs
The IDT71T75702/902 contain address, data-in and control signal
registers. The outputs are flow-through (no output data register). Output
enable is the only asynchronous signal and can be used to disable the
outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71T75702/902
to be suspended as long as necessary. All synchronous inputs are
ignored when CEN is high and the internal device registers will hold their
previous values.
There are three chip enable pins (CE
user to deselect the device when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state one cycle after the chip is deselected or a write
is initiated.
The IDT71T75702/902 have an on-chip burst counter. In the burst
mode, the IDT71T75702/902 can provide four cycles of data for a single
address presented to the SRAM. The order of the burst sequence is
defined by the LBO input pin. The LBO pin selects between linear and
interleaved burst sequence. The ADV/LD signal is used to load a new
external address (ADV/LD = LOW) or increment the internal burst counter
(ADV/LD = HIGH).
The IDT71T75702/902 SRAMs utilize IDT’s high-performance
CMOS process, and are packaged in a JEDEC Standard 14mm x 20mm
100-pin plastic thin quad flatpack (TQFP) as well as a 119 ball grid array
(BGA).
1
IDT71T75702
IDT71T75902
, CE
, CE
) that allow the
1
2
2
Input
Synchronous
Input
Synchronous
Input
Asynchronous
Input
Synchronous
Input
Synchronous
Input
Synchronous
Input
N/A
Input
Synchronous
Input
Static
Input
N/A
Input
N/A
Input
N/A
Output
N/A
Input
Asynchronous
Input
Synchronous
I/O
Synchronous
Supply
Static
Supply
Static
5319 tbl 01
FEBRUARY 2009
DSC-5319/08

IDT71T75702S85PFI8 Summary of contents

  • Page 1

    ... There are three chip enable pins (CE user to deselect the device when desired. If any one of these three is not asserted when ADV/LD is low, no new memory operation can be initiated. However, any pending data transfers (reads or writes) will be completed. The data bus will tri-state one cycle after the chip is deselected or a write is initiated ...

  • Page 2

    ... R/ signal is a synchronous input that identifies whether the current load cycle initiated is a Read or Write access to the memory array. The data bus activity for the current cycle takes place one clock cycle later. is sampled high, all other synchronous inputs, including clock are ignored and outputs remain unchanged ...

  • Page 3

    ... Address A [0:18 R/W CEN ADV/LD BWx Clock OE TMS TDI JTAG TCK TRST (optional Control Logic Clk TDO 6.42 3 Commercial and Industrial Temperature Ranges 512K x 36 BIT MEMORY ARRAY Address Control DI DO Mux Sel Gate Data I/O [0:31], I/O P[1:4] 5319 drw 01 , ...

  • Page 4

    ... V 2.5 2.625 ____ V +0 (2) ____ V +0.3 V DDQ (1) ____ 0.7 V 5319 tbl 03 /2, once per cycle. CYC 6.42 4 Commercial and Industrial Temperature Ranges BIT MEMORY ARRAY Address Control DI DO Mux Sel Gate Data I/O [0:15], I/O P[1:2] 5319 drw 01a , ...

  • Page 5

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Ambient Grade V SS (1) Temperature Commerical 0 °C to +70 °C OV Industrial -40 °C to +85 °C OV ...

  • Page 6

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs 100 ...

  • Page 7

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs ...

  • Page 8

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs , (5) R/ ADV ...

  • Page 9

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs First Address Second Address Third Address (1) Fourth Address NOTE: 1. Upon completion of the Burst sequence the counter wraps ...

  • Page 10

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Cycle Address R/ ADV n n n+3 X ...

  • Page 11

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Cycle Address R/ ADV n NOTES High ...

  • Page 12

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Cycle Address R/ ADV n n n+3 X ...

  • Page 13

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Cycle Address R/ ADV ...

  • Page 14

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Symbol Parameter |I | Input Leakage Current LI , JTAG and ZZ Input Leakage Current | ...

  • Page 15

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Symbol Parameter t Clock Cycle Time CYC (1) Clock High Pulse Width t CH (1) Clock Low Pulse Width t ...

  • Page 16

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges 6. ...

  • Page 17

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges 6. ...

  • Page 18

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges 6. ...

  • Page 19

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs CEN Commercial and Industrial Temperature Ranges 6. ...

  • Page 20

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs CS Commercial and Industrial Temperature Ranges 6. ...

  • Page 21

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs t JF TCK (1) Device Inputs / TDI/TMS (2) Device Outputs / TDO ( 3) TRST t JRST NOTES: 1. ...

  • Page 22

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Instruction Field Revision Number (31:28) IDT Device ID (27:12) IDT JEDEC ID (11:1) ID Register Indicator Bit (Bit 0) Instruction ...

  • Page 23

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges 6.42 23 ...

  • Page 24

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Commercial and Industrial Temperature Ranges 6.42 24 ...

  • Page 25

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs OE OE DATA OUT NOTE read operation is assumed progress. XXXX S XX Device Power ...

  • Page 26

    IDT71T75702, IDT71T75902, 512K x 36 18, 2.5V Synchronous ZBT™ SRAMs with 2.5V I/O, Burst Counter and Flow-Through Outputs Rev Date Pages 0 05/25/00 1 08/24/ 10/16/ 12/21/01 ...